Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film

ABSTRACT

An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate. The present invention provides a material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A) or (1B); and (B) an organic solvent, 
                         
noting that in the general formula (1A), when W 1  represents any of
 
                         
R 1  does not represent any of

TECHNICAL FIELD

The present invention relates to: a material for forming an organic filmused in a semiconductor device manufacturing process; a substrate formanufacturing a semiconductor device using the material; a method forforming an organic film; a patterning process by a multilayer resistmethod; and a compound for forming an organic film suitably used in thematerial.

BACKGROUND ART

Conventionally, high integration and high processing speed ofsemiconductor devices have been achieved through the miniaturization ofpattern size by shortening the wavelength of light sources inlithography technology using light exposure (photolithography), which iscommonly employed technology. To form such a fine circuit pattern on asemiconductor device substrate (substrate to be processed), thefollowing method is generally employed in which the substrate to beprocessed is processed by dry etching using a patterned photoresist filmas an etching mask. In practice, however, there is no dry etching methodcapable of providing an absolute etching selectivity between thephotoresist film and the substrate to be processed. Hence, recently, ithas been common to process a substrate by a multilayer resist method.This method is as follows: first, a middle layer film having a differentetching selectivity from a photoresist film (hereinafter, resist upperlayer film) is placed between the resist upper layer film and asubstrate to be processed; a pattern is formed in the resist upper layerfilm; then, the pattern is transferred to the middle layer film by dryetching using the resist upper layer film pattern as a dry etching mask;further, the pattern is transferred to the substrate to be processed bydry etching using the middle layer film as a dry etching mask.

One of the multilayer resist methods is a 3-layer resist method whichcan be performed with a typical resist composition used in a monolayerresist method. In this method, a substrate to be processed is coatedwith an organic underlayer film material composed of an organicresin-containing composition and then baked to form an organicunderlayer film (hereinafter, organic film); the organic film issubsequently coated with a resist middle layer film material composed ofa composition containing a silicon-containing resin, and baked to form asilicon-containing film (hereinafter, silicon middle layer film);thereafter, a typical organic photoresist film (hereinafter, resistupper layer film) is formed on the silicon middle layer film. The resistupper layer film is patterned and then subjected to dry etching withfluorine-based gas plasma, so that the organic resist upper layer filmcan exhibit a favorable etching selectivity ratio relative to thesilicon middle layer film. Thus, the resist upper layer film pattern canbe transferred to the silicon middle layer film. This method allows apattern to be easily transferred to the silicon middle layer film evenif a resist upper layer film does not have film thickness sufficient fordirectly processing the substrate to be processed or if a resist upperlayer film does not have sufficient dry etching resistance forprocessing the substrate to be processed. This is because the siliconmiddle layer film generally has a film thickness equal to or smallerthan the resist upper layer film. Subsequently, using the silicon middlelayer film having the transferred pattern as a dry etching mask, thepattern is transferred to the organic underlayer film by dry etchingwith oxygen- or hydrogen-based gas plasma. Thereby, the pattern can betransferred to the organic underlayer film having dry etching resistancesufficient for substrate processing. This organic underlayer filmpattern having the transferred pattern can be transferred to thesubstrate by dry etching with a fluorine-based gas, chlorine-based gas,or the like.

Meanwhile, the miniaturization in the semiconductor device manufacturingprocess is approaching the limit inherent in the wavelength of lightsources for photolithography. Accordingly, recently, the highintegration of semiconductor devices that does not rely onminiaturization has been examined. As one means for the highintegration, semiconductor devices having complicated structures such asmultigate structure have been examined, and some of these have beenalready put into practical use. In forming such structures by multilayerresist methods, it is possible to employ an organic film material whichis capable of filling a fine pattern including hole, trench, and finformed on a substrate to be processed with a film without space, andcapable of filling a step- or pattern-dense region and a pattern-freeregion with a film and planarizing the regions. The use of such anorganic film material to form an organic underlayer film having a flatsurface on a stepped substrate reduces fluctuations in film thicknessesof a silicon middle layer film and a resist upper layer film formedthereon, and can suppress reductions in a focus margin inphotolithography and a margin in a subsequent step of processing thesubstrate to be processed. This makes it possible to manufacturesemiconductor devices with high yields. On the other hand, in themonolayer resist method, the upper resist film has to have a large filmthickness to fill a stepped or patterned substrate to be processed. As aresult, for example, pattern collapse occurs after exposure anddevelopment, and the pattern profile deteriorates due to reflection fromthe substrate at exposure. Consequently, the pattern formation margin atexposure is narrowed, making it difficult to manufacture semiconductordevices with high yields.

Further, as techniques for the high processing speed of next-generationsemiconductor devices, for example, the applications of the followingmaterials have also started to be examined: novel materials having highelectron mobility using strained silicon, gallium arsenic, and so forth;and high-precision materials such as ultrathin polysilicon controlled inunits of angstrom. However, in substrates to be processed to which suchnovel high-precision materials are applied, the materials may becorroded by oxygen in air under conditions during the flat filmformation from an organic underlayer film material as described above,for example, film formation conditions of air and 300° C. or higher.Hence, such a performance as a high processing speed of a semiconductordevice according to the material design cannot be exhibited, andindustrially satisfactory yield may not be achieved. For this reason, anorganic underlayer film material capable of forming a film in an inertgas has been desired so as to avoid a decrease in yield due to substratecorrosion by air under such high temperature conditions.

Conventionally, condensed resins using aromatic alcohols and carbonylcompounds such as ketones and aldehydes as condensing agents for aphenol compound or naphthol compound have been known as materials forforming an organic film for multilayer resist methods. Examples of suchcondensed resins include a fluorene bisphenol novolak resin described inPatent Document 1, a bisphenol compound and a novolak resin thereofdescribed in Patent Document 2, a novolak resin of an adamantane phenolcompound described in Patent Document 3, a bisnaphthol compound and anovolak resin thereof described in Patent Document 4, and the like.Crosslinking by a methylol compound as a crosslinking agent, or a curingaction by a crosslinking reaction by oxidation at the α-position of anaromatic ring by the action of oxygen in air and the followingcondensation causes these materials to form films having solventresistance in relation to a coating film material used in the subsequentstep.

Further, a material in which triple bonds are employed as intermolecularlinking groups in a curable resin is known. For example, PatentDocuments 5 to 10 are known. In these materials, a cured film havingsolvent resistance is formed not only by the methylol-derivedcrosslinking, but also by crosslinking by polymerization with triplebonds. However, these materials for forming an organic film do not havesufficient filling property of a pattern formed on a substrate orsufficient planarizing property.

Moreover, as examples of compounds having an imide structure shown inthe present invention, a resin having a polyimide structure described inPatent Document 11 and Patent Document 12 in which a compound having abismaleimide structure is used are known. However, regarding thesematerials, there are no examples regarding a monomolecular compoundwhich has a terminal substituent having a triple bond, and cured filmformation in an inert gas, fluctuation in film thickness due to thermaldecomposition under high temperature conditions, filling property,planarizing property, and so forth have not been known.

CITATION LIST Patent Literature

-   Patent Document 1: Japanese Patent Laid-Open Publication No.    2005-128509-   Patent Document 2: Japanese Patent Laid-Open Publication No.    2006-293298-   Patent Document 3: Japanese Patent Laid-Open Publication No.    2006-285095-   Patent Document 4: Japanese Patent Laid-Open Publication No.    2010-122656-   Patent Document 5: Japanese Patent Laid-Open Publication No.    2010-181605-   Patent Document 6: International Publication No. WO2014-208324-   Patent Document 7: Japanese Patent Laid-Open Publication No.    2012-215842-   Patent Document 8: Japanese Patent Laid-Open Publication No.    2016-044272-   Patent Document 9: Japanese Patent Laid-Open Publication No.    2016-060886-   Patent Document 10: Japanese Patent Laid-Open Publication No.    2017-119671-   Patent Document 11: Japanese Patent Laid-Open Publication No.    2013-137334-   Patent Document 12: International Publication No. WO2018-212116

SUMMARY OF INVENTION Technical Problem

The present invention has been made in view of the above circumstances.An object of the present invention is to provide: a compound containingan imide group which is not only cured under film formation conditionsof inert gas as well as air and has excellent heat resistance andproperties of filling and planarizing a pattern formed on a substrate,but can also form an organic underlayer film with favorable adhesion toa substrate, and a material for forming an organic film containing thecompound. Further, the present invention also provides a substrate formanufacturing a semiconductor device using the material, a method forforming an organic film and a patterning process.

Solution to Problem

To achieve the above object, the present invention provides a materialfor forming an organic film, comprising:

(A) a compound for forming an organic film shown by the followinggeneral formula (1A) or (1B); and

(B) an organic solvent,

wherein W₁ represents a tetravalent organic group, and R₁ represents anyof the groups shown by the following formula (1C), and two or more kindsof R₁ may be used in combination,

wherein W₁ and R₁ have the same meanings as defined above; R₂ representsa hydrogen atom or a linear or branched, saturated or unsaturatedhydrocarbon group having 1 to 20 carbon atoms, and a methylene groupconfiguring R₂ may be substituted with an oxygen atom or a carbonylgroup,

noting that in the general formula (1A), when W₁ represents any of

R₁ does not represent any of

With such a material for forming an organic film, the material forforming an organic film can form an organic film which is cured underfilm formation conditions of inert gas as well as air, and has high heatresistance, favorable adhesion to a substrate, and high filling andplanarizing properties.

Furthermore, the component (A) is preferably a compound shown by thefollowing general formula (1D) or (1E),

wherein W₂ represents a divalent organic group, and R₁ has the samemeaning as defined above,

wherein W₂, R₁, and R₂ have the same meanings as defined above.

It is preferable to have such an imide or an imide precursor structurein the compound for forming an organic film from the viewpoint ofproviding excellent heat resistance.

In this case, W₂ in the general formulae (1D) and (1E) preferablyrepresents any of a single bond and groups shown by the followingformula (1F) and the following general formula (1G),

wherein W₃ represents a divalent organic group having at least onearomatic ring.

It is preferable to have such a structure in the compound for forming anorganic film from the viewpoint of solubility in organic solvents.

In this case, W₃ in the general formula (1G) preferably represents anyof groups shown by the following formula (1H),

wherein an aromatic ring in the above formula may have a substituentthereon.

It is preferable to have such a structure from the viewpoint ofachieving both heat resistance and solvent solubility.

Furthermore, the component (A) is preferably a compound shown by thefollowing general formula (1I),

wherein W₄ represents a single bond or any of groups shown by thefollowing formula (1J), n1 represents 0 or 1, and R₁ has the samemeaning as defined above.

Using such a compound, film shrinking in curing is suppressed, thusmaking it possible for the material for forming an organic film to forman organic film having excellent filling and planarizing properties.

Furthermore, the component (A) preferably satisfies 1.00≤Mw/Mn≤1.10where Mw is a weight average molecular weight and Mn is a number averagemolecular weight measured by gel permeation chromatography in terms ofpolystyrene.

Controlling Mw/Mn of the compound for forming an organic film withinsuch a range, an organic film excellent in filling property andplanarizing property can be formed.

Furthermore, the component (B) is preferably a mixture of one or morekinds of organic solvent having a boiling point of lower than 180° C.and one or more kinds of organic solvent having a boiling point of 180°C. or higher.

With such a material for forming an organic film, the compound forforming an organic film is provided with thermal flowability by adding ahigh-boiling-point solvent, so that the material for forming an organicfilm has both higher filling and planarizing properties.

Furthermore, the material for forming an organic film preferably furthercomprises at least one of (C) an acid generator, (D) a surfactant, (E) acrosslinking agent, and (F) a plasticizer.

The inventive material for forming an organic film may include at leastone of the components (C) to (F) depending on the purpose thereof.

Furthermore, the present invention provides a substrate formanufacturing a semiconductor device, comprising an organic film on thesubstrate, the organic film being formed by curing the material forforming an organic film.

The organic film of the present invention has both high filling andplanarizing properties, and accordingly, the organic film does not havefine pores due to insufficient filling or asperity in the organic filmsurface due to insufficient planarizing property. A semiconductor devicesubstrate planarized by the organic film of the present invention has anincreased process margin at patterning, making it possible tomanufacture semiconductor devices with high yields.

Furthermore, the present invention provides a method for forming anorganic film employed in a semiconductor device manufacturing process,the method comprising:

spin-coating a substrate to be processed with the above material forforming an organic film; and

heating the substrate to be processed coated with the material forforming an organic film under an inert gas atmosphere at a temperatureof 50° C. or higher to 600° C. or lower within a range of 10 seconds to7200 seconds to obtain a cured film.

Further, the present invention provides a method for forming an organicfilm employed in a semiconductor device manufacturing process, themethod comprising:

spin-coating a substrate to be processed with the above material forforming an organic film;

heating the substrate to be processed coated with the material forforming an organic film in air at a temperature of 50° C. or higher to250° C. or lower within a range of 5 seconds to 600 seconds to form acoating film; and

then heating under an inert gas atmosphere at a temperature of 200° C.or higher to 600° C. or lower within a range of 10 seconds to 7200seconds to obtain a cured film.

An organic film employed in a semiconductor device manufacturing processformed by the inventive method has high heat resistance and high fillingand planarizing properties, and allows a favorable semiconductor deviceyield when used in a semiconductor device manufacturing process.

Furthermore, the inert gas preferably has an oxygen concentration of 1%or less.

The inventive material for forming an organic film is capable of formingan organic film which is sufficiently cured without generating asublimation product even when the heating is performed under such aninert gas atmosphere, and which also has excellent adhesion to asubstrate.

Furthermore, the substrate to be processed may have a structure or astep with a height of 30 nm or more.

The inventive method for forming an organic film is particularly usefulwhen forming a flat organic film on such a substrate to be processed.

Furthermore, the present invention provides a patterning processcomprising:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming a silicon-containing resist middle layer film on the organicfilm from a silicon-containing resist middle layer film material;

forming a resist upper layer film on the silicon-containing resistmiddle layer film from a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the silicon-containing resist middle layerfilm by etching using the resist upper layer film having the formedpattern as a mask;

transferring the pattern to the organic film by etching using thesilicon-containing resist middle layer film having the transferredpattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

Furthermore, the present invention provides a patterning processcomprising:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming a silicon-containing resist middle layer film on the organicfilm from a silicon-containing resist middle layer film material;

forming an organic antireflective film on the silicon-containing resistmiddle layer film;

forming a resist upper layer film on the organic antireflective filmfrom a photoresist composition, so that a 4-layered film structure isconstructed; forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic antireflective film and thesilicon-containing resist middle layer film by etching using the resistupper layer film having the formed pattern as a mask;

transferring the pattern to the organic film by etching using thesilicon-containing resist middle layer film having the transferredpattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

Furthermore, the present invention provides a patterning processcomprising:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming an inorganic hard mask selected from a silicon oxide film, asilicon nitride film, a silicon oxynitride film, a titanium oxide film,and a titanium nitride film on the organic film;

forming a resist upper layer film on the inorganic hard mask from aphotoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the inorganic hard mask by etching using theresist upper layer film having the formed pattern as a mask;

transferring the pattern to the organic film by etching using theinorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

Furthermore, the present invention provides a patterning processcomprising:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming an inorganic hard mask selected from a silicon oxide film, asilicon nitride film, a silicon oxynitride film, a titanium oxide film,and a titanium nitride film on the organic film;

forming an organic antireflective film on the inorganic hard mask;

forming a resist upper layer film on the organic antireflective filmfrom a photoresist composition, so that a 4-layered film structure isconstructed;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic antireflective film and theinorganic hard mask by etching using the resist upper layer film havingthe formed pattern as a mask;

transferring the pattern to the organic film by etching using theinorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

The inventive material for forming an organic film can be suitably usedfor various patterning processes such as a 3-layer resist process usinga silicon-containing resist middle layer film or an inorganic hard mask,and a 4-layer resist process additionally using an organicantireflective film. In a semiconductor device manufacturing process,forming a circuit pattern by the inventive patterning process asdescribed, a semiconductor device can be manufactured with a high yield.

In this event, the inorganic hard mask is preferably formed by a CVDmethod or an ALD method.

In the inventive patterning process, the inorganic hard mask can beformed by such a method, for example.

Furthermore, the circuit pattern is preferably formed by a lithographyusing light with a wavelength of 10 nm or more to 300 nm or less, adirect drawing by electron beam, a nanoimprinting, or a combinationthereof.

Furthermore, when the circuit pattern is formed, the circuit pattern ispreferably developed by alkaline development or development with anorganic solvent.

In the inventive patterning process, such circuit pattern formationmeans and development means can be suitably used.

Furthermore, the body to be processed is preferably a semiconductordevice substrate or the semiconductor device substrate coated with anyof a metal film, a metal carbide film, a metal oxide film, a metalnitride film, a metal oxycarbide film, and a metal oxynitride film.

Furthermore, as the body to be processed, a body to be processedcomprising silicon, titanium, tungsten, hafnium, zirconium, chromium,germanium, copper, silver, gold, aluminum, indium, gallium, arsenic,palladium, iron, tantalum, iridium, cobalt, manganese, molybdenum, or analloy thereof is preferably used.

The inventive patterning process is capable of processing the body to beprocessed as described above to form a pattern.

Furthermore, the present invention provides a compound for forming anorganic film shown by the following general formula (1A) or (1B),

wherein W₁ represents a tetravalent organic group, and R₁ represents anyof the groups shown by the following formula (1C), and two or more kindsof R₁ may be used in combination,

wherein W₁ and R₁ have the same meanings as defined above; R₂ representsa hydrogen atom or a linear or branched, saturated or unsaturatedhydrocarbon group having 1 to 20 carbon atoms, and a methylene groupconfiguring R₂ may be substituted with an oxygen atom or a carbonylgroup,

noting that in the general formula (1A), when W₁ represents any of

R₁ does not represent any of

With a compound having such an imide or imide precursor structure, thecompound for forming an organic film can form an organic film which iscured under film formation conditions of inert gas as well as air, andhas high heat resistance, favorable adhesion to a substrate, and highfilling and planarizing properties.

Furthermore, the compound for forming an organic film is preferablyshown by the following general formula (1D) or (1E),

wherein W₂ represents a divalent organic group, and R₁ has the samemeaning as defined above,

wherein W₂, R₁, and R₂ have the same meanings as defined above.

Such a compound has curability under film formation conditions of inertgas as well as air, and can also exhibit excellent heat resistance undereither film formation condition.

In this event, W₂ in the general formulae (1D) and (1E) preferablyrepresents any of a single bond and groups shown by the followingformula (1F) and the following general formula (1G),

wherein W₃ represents a divalent organic group having at least onearomatic ring.

With such a compound, it is possible to provide solvent solubilitywithout losing heat resistance.

In this event, W₃ in the general formula (1G) preferably represents anyof groups shown by the following formula (1H),

wherein an aromatic ring in the above formula may have a substituentthereon.

With a compound having such a structure, it is possible to provideetching resistance without losing heat resistance.

Furthermore, the compound for forming an organic film is preferably acompound shown by the following general formula (1I),

wherein W₄ represents a single bond or any of groups shown by thefollowing formula (1J), n1 represents 0 or 1, and R₁ has the samemeaning as defined above.

With such a compound, film shrinking in curing is suppressed, thusmaking it possible for the compound for forming an organic film to haveexcellent filling and planarizing properties.

Advantageous Effects of Invention

As described above, the inventive compound is a compound useful forforming an organic underlayer film which is cured without generating aby-product even in film formation in an inert gas for preventingsubstrate corrosion, and also has high filling and planarizingproperties. Moreover, a material for forming an organic film containingthis compound is a material which forms an organic film having excellentfilling and planarizing properties, and also having characteristics suchas heat resistance and etching resistance. Accordingly, the material isextremely useful as, for example, an organic film material in amultilayer resist method such as a 2-layer resist method, a 3-layerresist method using a silicon-containing middle layer film, and a4-layer resist method using a silicon-containing middle layer film andan organic antireflective film, or as a planarizing material formanufacturing a semiconductor device. Moreover, an organic film formedfrom the inventive material for forming an organic film has excellentheat resistance, and therefore, is suitable for patterning since thereis no fluctuation in film thickness due to thermal decomposition evenwhen a CVD hard mask is formed on the organic underlayer film.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is an explanatory diagram of the planarizing property in thepresent invention;

FIG. 2 is an explanatory diagram of an example of an inventivepatterning process according to a 3-layer resist method;

FIG. 3 is an explanatory diagram of a method for evaluating the fillingproperty in Examples; and

FIG. 4 is an explanatory diagram of a method for evaluating theplanarizing property in Examples.

DESCRIPTION OF EMBODIMENTS

As described above, it has been desired to develop a material forforming an organic film, which generates no by-product under such a filmformation condition in an inert gas as to prevent substrate corrosion,for example, even at 300° C. or higher, and which is capable of formingan organic underlayer film not only excellent in properties of fillingand planarizing a pattern formed on a substrate but also favorable fordry etching resistance during substrate processing. Moreover, it hasbeen desired to develop: a material for forming an organic film, whichcauses no fluctuation in film thickness of the organic underlayer filmdue to thermal decomposition even when a CVD hard mask is formed on theorganic underlayer film; and a compound for forming an organic filmuseful in a patterning process using the material.

Generally, when an organic underlayer film is formed, a composition isformed by dissolving a compound for forming an organic film in anorganic solvent. Then, a substrate on which a structure of asemiconductor device, wiring, and so forth have been formed is coatedwith this composition and baked to form the organic underlayer film.Immediately after the application of the composition, a coating film isformed in a shape according to a step structure on the substrate.Nevertheless, when the coating film is baked, most of the organicsolvent is evaporated before curing, so that an organic film is formedfrom the compound for forming an organic film remaining on thesubstrate. The present inventors have considered that if the compoundfor forming an organic film remaining on the substrate has sufficientthermal flowability, the step profile immediately after the applicationis planarized by thermal flow, and a flat film can be formed.

The present inventors further earnestly studied and consequently foundthat with a compound for forming an organic film having an imidestructure or an imide ring precursor structure shown by the followinggeneral formula (1A) or (1B), a substituent shown by R₁ having a triplebond provides thermosetting property equivalent to that of aconventional underlayer film material not only in air but also in inertgas. In addition, the material for forming an organic film generates noby-product during the curing reaction by the triple bond shown by R₁,which is a linking group, and the thermal flowability is favorable.Accordingly, the present inventors have found that the material forforming an organic film has all of high filling and planarizingproperties, favorable dry etching resistance, and such heat resistancethat the material causes no fluctuation in coating film thickness due tothermal decomposition even when a CVD hard mask is formed, and havecompleted the present invention.

That is, the present invention is a material for forming an organicfilm, comprising:

(A) a compound for forming an organic film shown by the followinggeneral formula (1A) or (1B); and

(B) an organic solvent.

Furthermore, the present invention is a compound for forming an organicfilm shown by the following general formula (1A) or (1B).

Hereinafter, the present invention will be described in detail. However,the present invention is not limited thereto.

<Compound for Forming Organic Film>

The inventive compound for forming an organic film is a compound havingthe imide or imide precursor structure shown by the following generalformula (1A) or (1B).

(where W₁ represents a tetravalent organic group, and R₁ represents anyof the groups shown by the following formula (1C), and two or more kindsof R₁ may be used in combination.)

(where W₁ and R₁ have the same meanings as defined above; R₂ representsa hydrogen atom or a linear or branched, saturated or unsaturatedhydrocarbon group having 1 to 20 carbon atoms, and a methylene groupconfiguring R₂ may be substituted with an oxygen atom or a carbonylgroup.)

Note that in the general formula (1A), when W₁ represents any of

R₁ does not represent any of

R₁ shown by the above (1C) functions as a thermal linking group. In viewof curability, heat resistance and availability of raw material, R₁preferably represents an ethynyl group or an ethynylphenyl group.

In order to provide flowability and solvent solubility, R₂ in theformula (1B) may have a long chain or a branched structure ofhydrocarbon introduced or the methylene group may be substituted with anoxygen atom or a carbonyl group. Moreover, by employing an imidestructure which is already ring-closed like the structure (1A), anelimination reaction such as a dehydration which occurs when a precursorof an imide compound such as amic acid undergoes thermal ring closure iseliminated. Thus, film shrinking is suppressed and the planarizingproperty of the organic film is not lost. Furthermore, by imidizing forstability beforehand, decomposition and the like of an imide compoundprecursor such as an amic acid due to an equilibrium reaction can besuppressed, allowing superiority in storage stability as well. In viewof the above points, the formula (1A) is preferable.

Examples of W₁ in the above general formula include the followingstructural formula, and these aromatic rings may have a substituentthereon. Furthermore, examples of the substituent include a hydroxylgroup, a trifluoromethyl group, an alkyl group having 1 to 10 carbonatoms, an alkynyl group and an alkenyl group having 3 to 10 carbonatoms, an alkyloxy group having 1 to 10 carbon atoms, an alkynyloxygroup and an alkenyloxy group having 3 to 10 carbon atoms, an aryl grouphaving 6 to 10 carbon atoms, a nitro group, a halogen group, a nitrilegroup, an alkoxycarbonyl group having 1 to 10 carbon atoms, and analkanoyloxy group having 1 to 10 carbon atoms.

The inventive compound for forming an organic film is more preferably acompound shown by the following general formula (1D) or (1E). To provideheat resistance, the compound preferably has an aromatic imide oraromatic imide precursor structure.

(where W₂ represents a divalent organic group, and R₁ has the samemeaning as defined above.)

(where W₂, R₁, and R₂ have the same meanings as defined above.)

W₂ in the formulae shown by (1D) and (1E) in the above general formulaepreferably represents any of a single bond and groups shown by thefollowing formula (1F) and the following general formula (1G).

(where W₃ represents a divalent organic group having at least onearomatic ring.)

W₃ in the general formula (1G) preferably represents the following (1H),and among these, from the viewpoints of solvent solubility and providingflowability, those having an isopropylidene structure, ahexafluoroisopropylidene structure, fluorene structure, or an indanestructure are preferable, and from the viewpoint of heat resistance,those having a fluorene structure or an indane structure are morepreferable.

(where an aromatic ring in the above formula may have a substituentthereon.)

Furthermore, the inventive compound for forming an organic film ispreferably a compound shown by the following general formula (1I).

(where W₄ represents a single bond or any of groups shown by thefollowing formula (1J), n1 represents 0 or 1, and R₁ has the samemeaning as defined above.)

An ether structure introduced into the main skeleton as in the above(1I) functions as a flexible linking group, so that it is possible toprovide thermal flowability and solvent solubility. Accordingly, theimide compound in the present invention is a compound for forming anorganic film which can have both high filling and planarizing propertiesand heat resistance.

The inventive compound for forming an organic film preferably satisfies1.00≤Mw/Mn≤1.10 where Mw is a weight average molecular weight and Mn isa number average molecular weight measured by gel permeationchromatography in terms of polystyrene. Controlling Mw/Mn of thecompound for forming an organic film within such a range, an organicfilm excellent in filling property and planarizing property can beformed.

Even with a mixture of a monomolecular compounds including multipleterminal structures and main skeleton structures, when Mw/Mn is withinthe above range, thermal flowability of the compound for forming anorganic film becomes even more favorable. Therefore, when blended in acomposition, the compound can not only favorably fill a fine structureformed on a substrate but also form an organic film having the entiresubstrate planarized.

[Method for Manufacturing Compound for Forming Organic Film]

As a method for obtaining the inventive compound for forming an organicfilm, it is possible to synthesize the compound by obtaining an amicacid compound through the reaction of tetracarboxylic dianhydride andaniline derivative shown below (STEP 1), followed by thermal or chemicalimidization (STEP 2-1). In this event, it is also possible to notperform the imidization and use the amic acid compound as it is as thecompound for forming an organic film. The tetracarboxylic dianhydrideand the aniline derivative used in the amic acid compound synthesis maybe used alone or two or more kinds thereof may be used. These can beappropriately selected and combined according to required properties. W₁and R₁ in the following formulae have the same meanings as definedabove.

Step 1

Step 2-1

Synthesis of the amic acid compound shown by STEP 1 can generally beperformed in an organic solvent at room temperature or under cooling orheating as necessary. Examples of the solvent used include alcohols suchas methanol, ethanol, isopropyl alcohol, butanol, ethylene glycol,propylene glycol, diethylene glycol, glycerol, ethylene glycolmonomethyl ether, propylene glycol monomethyl ether, and propyleneglycol monoethyl ether; ethers such as diethyl ether, dibutyl ether,diethylene glycol diethyl ether, diethylene glycol dimethyl ether,tetrahydrofuran, and 1,4-dioxane; chlorinated solvents such as methylenechloride, chloroform, dichloroethane, and trichloroethylene;hydrocarbons such as hexane, heptane, benzene, toluene, xylene, andcumene; nitriles such as acetonitrile; ketones such as acetone, ethylmethyl ketone, isobutyl methyl ketone, and cyclohexanone; esters such asmethyl acetate, ethyl acetate, n-butyl acetate, propylene glycol methylether acetate, and γ-butyrolactone; non-protic polar solvents such asN-methyl-2-pyrrolidone, N,N-dimethylacetamide, dimethylsulfoxide,N,N-dimethylformamide, and hexamethylphosphoric triamide; and the like.These can be used alone or in mixture of two or more thereof. Thesesolvents can be used within a range of 0 to 2,000 parts by mass relativeto 100 parts by mass of the reaction raw materials. The reactiontemperature is preferably −50° C. to approximately the boiling point ofthe solvent, and room temperature to 150° C. is even more preferable.Reaction time is appropriately selected from 0.1 to 100 hours.

For these syntheses, a base catalyst can be used as necessary, andexamples of the base catalyst include inorganic base compounds such assodium hydrogen carbonate, sodium carbonate, potassium carbonate,calcium carbonate, cesium carbonate, sodium hydroxide, potassiumhydroxide, sodium hydride, and potassium phosphate; organic bases suchas triethyl amine, diisopropyl ethyl amine, N,N-dimethylaniline,pyridine, and 4-dimethylaminopyridine; and the like. These can be usedalone or in combination of two or more thereof. The amount used iswithin the range of 0.01 to 20 moles relative to the number of moles ofraw material dianhydride, preferably 0.05 to 10 moles.

The reaction method includes: a method in which the tetracarboxylicdianhydride and the aniline derivative are charged into the solvent atonce; a method of charging a dispersed or dissolved tetracarboxylicdianhydride and aniline derivative separately or mixed by addingdropwise; a method in which either the dianhydride or the anilinederivative is dispersed or dissolved in the solvent, then the otherdispersed or dissolved in the solvent is added dropwise to charge; andthe like. Furthermore, when multiple tetracarboxylic dianhydrides andaniline derivatives are each charged, they can be mixed for reactionbeforehand, or they can be made to react individually in succession.When a base catalyst is used, methods include: a method in which thedianhydride or the aniline derivative is charged at once; a method inwhich the base catalyst is dispersed or dissolved beforehand, thendropwise addition is performed; and the like. The obtained amic acidsolution may proceed successively to the reaction of STEP 2-1 or STEP2-2 described later. Furthermore, the obtained amic acid solution may beused directly as a compound for forming an organic film, and theresultant may be diluted with an organic solvent, then subjected toliquid separation and washing to remove unreacted raw materials, thecatalyst, and so on present in the system, and thus collected.

The organic solvent used in the liquid separation and washing is notparticularly limited, as long as the organic solvent is capable ofdissolving the compounds and is separated into two layers when mixedwith water. The organic solvent includes hydrocarbons such as hexane,heptane, benzene, toluene, and xylene; esters such as ethyl acetate,n-butyl acetate, and propylene glycol methyl ether acetate; ketones suchas methyl ethyl ketone, methyl amyl ketone, cyclohexanone, and methylisobutyl ketone; ethers such as diethyl ether, diisopropyl ether,methyl-tert-butyl ether, and ethylcyclopentylmethyl ether; chlorinatedsolvents such as methylene chloride, chloroform, dichloroethane, andtrichloroethylene; mixtures thereof; and the like. As washing water usedin this event, generally, what is called deionized water or ultrapurewater may be used. The washing may be performed once or more, preferablyapproximately once to five times because washing ten times or more doesnot always produce the full washing effects thereof.

In the liquid separation and washing, the washing may be performed witha basic aqueous solution to remove the unreacted raw materials or acidiccomponents in the system. The base specifically includes hydroxides ofalkaline metals, carbonates of alkaline metals, hydroxides of alkaliearth metals, carbonates of alkali earth metals, ammonia, organicammonium, and the like.

Further, in the liquid separation and washing, the washing may beperformed with an acidic aqueous solution to remove the unreacted rawmaterials, metal impurities, or basic components in the system. The acidspecifically includes inorganic acids such as hydrochloric acid,hydrobromic acid, sulfuric acid, nitric acid, phosphoric acid, andheteropoly acid; organic acids such as oxalic acid, fumaric acid, maleicacid, trifluoroacetic acid, methanesulfonic acid, benzenesulfonic acid,p-toluenesulfonic acid, and trifluoromethanesulfonic acid; and the like.

The liquid separation and washing may be performed with any one of thebasic aqueous solution and the acidic aqueous solution, or can beperformed with a combination of the two. The liquid separation andwashing is preferably performed with the basic aqueous solution and theacidic aqueous solution in this order from the viewpoint of removing themetal impurities.

After the liquid separation and washing with the basic aqueous solutionand the acidic aqueous solution, washing with neutral water may besuccessively performed. The washing may be performed once or more,preferably approximately once to five times. As the neutral water,deionized water, ultrapure water, or the like as mentioned above may beused. The washing may be performed once or more, but if the washing isnot performed sufficiently, the basic components and acidic componentscannot be removed in some cases. The washing is preferably performedapproximately once to five times because washing ten times or more doesnot always produce the full washing effects thereof.

Further, the reaction product after the liquid separation can also becollected as a powder by concentrating and drying the solvent orcrystallizing the reaction product under reduced pressure or normalpressure. Alternatively, the reaction product can also be retained inthe state of solution with an appropriate concentration to improve theworkability in preparing the inventive material for forming an organicfilm. The concentration in this event is preferably 0.1 to 50 mass %,more preferably 0.5 to 30 mass %. With such a concentration, theviscosity is hardly increased, making it possible to preventdeterioration of the workability; in addition, since the amount of thesolvent is not excessive, so it is economical.

The solvent in this event is not particularly limited, as long as thesolvent is capable of dissolving the compound. Specific examples of thesolvent include ketones such as cyclohexanone and methyl-2-amyl ketone;alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol,1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propyleneglycol monomethyl ether, ethylene glycol monomethyl ether, propyleneglycol monoethyl ether, ethylene glycol monoethyl ether, propyleneglycol dimethyl ether, and diethylene glycol dimethyl ether; and esterssuch as propylene glycol monomethyl ether acetate, propylene glycolmonoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate,methyl 3-methoxypropionate, ethyl 3-ethoxy propionate, tert-butylacetate, tert-butyl propionate, and propylene glycol mono-tert-butylether acetate. These can be used alone or in mixture of two or morethereof.

The imide compound shown by STEP 2-1 can be synthesized by thermal orchemical imidization. These methods can be suitably selected accordingto the thermal stability of the linking group in the desired imidecompound and the reactivity of the introduced substituent and thereagent used in the chemical imidization.

When a thermal imidization is performed, a solvent capable of forming anazeotrope with water is added to a reaction solution of the amic acidcompound obtained in STEP 1 (dissolved in soluble solvent beforehand, ifcollected as a powder) and heated to 100° C. to 250° C., and adehydrative cyclization reaction takes place while generated water isbeing removed to perform imidization.

As the solvent capable of forming an azeotrope with water, esters suchas γ-butyrolactone; polar solvents such as N-methyl-2-pyrrolidone,N,N-dimethylacetamide, dimethylsulfoxide, and N,N-dimethylformamide;non-polar solvents such as benzene, toluene, xylene, and mesitylene; andthe like can be used. It is preferable to heat these solventsindividually or mixed, and perform dehydration while distilling thewater generated by ring-closure out of the system. These solvents can beused within a range of 0 to 2,000 parts by mass relative to 100 parts bymass of the reaction raw materials.

When a chemical imidization is performed, a base catalyst and an acidanhydride and the like as a dehydrating agent are added to a reactionsolution of the amic acid compound obtained in STEP 1 (dissolved insoluble solvent beforehand, if collected as a powder) and heated to 0°C. to 120° C. to perform imidization.

Base catalysts used in the chemical imidization include pyridine,triethyl amine, trimethylamine, tributylamine, trioctylamine, and thelike. Among these, pyridine is preferable, having suitable basicity forpromoting the reaction. Dehydrating agents include acetic anhydride,trimellitic anhydride, pyromellitic anhydride, trifluoroaceticanhydride, polyphosphoric acid, phosphorus pentoxide, phosphoruspentachloride, and thionyl chloride. Acetic anhydride is preferable fromthe viewpoint of purification after the reaction. The amount of thesecatalysts used is within the range of 0.1 to 20 moles relative to thenumber of moles of raw material dianhydride, preferably 0.2 to 10 moles.Furthermore, the base catalyst and the dehydrating agent may be usedalone or in mixture of two or more thereof, and the imidization ratiothereof can be controlled appropriately according to the requiredperformance of the target compound by adjusting the amount of thecatalyst, the amount of the dehydrating agent, the reaction temperature,and the reaction time.

The solvent used in this event is not particularly limited, as long asthe solvent is inactive in the above reaction. Examples of the solventinclude ethers such as diethylene glycol diethyl ether, diethyleneglycol dimethyl ether, tetrahydrofuran, and 1,4-dioxane; chlorinatedsolvents such as methylene chloride, chloroform, dichloroethane, andtrichloroethylene; hydrocarbons such as hexane, heptane, benzene,toluene, xylene, and cumene; nitriles such as acetonitrile; ketones suchas acetone, ethyl methyl ketone, isobutyl methyl ketone, andcyclohexanone; esters such as methyl acetate, ethyl acetate, n-butylacetate, propylene glycol methyl ether acetate, and γ-butyrolactone;non-protic polar solvents such as N-methyl-2-pyrrolidone,N,N-dimethylacetamide, dimethylsulfoxide, N,N-dimethylformamide, andhexamethylphosphoric triamide; and the like. These can be used alone orin mixture. These solvents can be used within a range of 0 to 2,000parts by mass relative to 100 parts by mass of the reaction rawmaterials.

As to the reaction method and the collection method for these imidizedcompounds, the method explained in the description of the amic acidcompound can be used.

For the synthesis of the amic acid or the imide compound,tetracarboxylic dianhydride and aniline derivative can be combinedaccording to a required performance. Specifically, a substituent thatcontributes to improvement of solvent solubility, adhesion, and fillingand planarizing properties, a substituent that contributes to etchingresistance and film formation, and the like can be introduced accordingto the required performance that is desired. A material for forming anorganic film using these compounds can achieve both higher filling andplanarizing properties as well as higher heat resistance.

Furthermore, as shown below, the amic acid compound obtained in theabove STEP 1 can be protected with an R₂ group according to the requiredperformance such as provision of solvent solubility or flowability (STEP2-2). The protected R₂ group undergoes dealcoholization accompanied by aring closure reaction due to the heat treatment after film formation,and an imide ring is formed (STEP 3). W₁, R₁, and R₂ in the followingformulae have the same meanings as defined above, and X₁ represents ahalogen, a tosyl group, or a mesyl group.

Step 2-2

Step 3

STEP 2-2 is not particularly limited, as long as the reaction enablesintroduction of R₂. Examples of the reaction include esterificationreaction using a base catalyst with a halide, tosylate, or mesylatehaving R₂ as a partial structure.

The base catalyst used above includes inorganic base compounds such assodium hydrogen carbonate, sodium carbonate, potassium carbonate,calcium carbonate, cesium carbonate, sodium hydroxide, potassiumhydroxide, sodium hydride, and potassium phosphate; organic aminecompounds such as triethyl amine, pyridine, and N-methylmorpholine; andthe like. These can be used alone or in combination of two or morethereof. The amount of catalyst used is within the range of 0.1 to 20moles relative to the number of moles of raw material amic acid,preferably, 0.2 to 10 moles.

The solvent used in this event is not particularly limited, as long asthe solvent is inactive in the above reaction. Examples of the solventinclude ether-based solvents such as diethyl ether, tetrahydrofuran, anddioxane; aromatic solvents such as benzene, toluene, and xylene;acetonitrile, dimethylsulfoxide, N,N-dimethylformamide,N-methylpyrrolidone, water, and the like. These can be used alone or inmixture. These solvents can be used within a range of 0 to 2,000 partsby mass relative to 100 parts by mass of the reaction raw materials. Thereaction temperature is preferably −50° C. to approximately the boilingpoint of the solvent, and room temperature to 150° C. is even morepreferable. Reaction time is appropriately selected from 0.1 to 100hours.

As to the reaction method and the collection method for the compounds,the method explained in the description of the amic acid compound can beused.

In the above reaction, two or more kinds of R2-X1, or other halide,tosylate, and mesylate than R2-X1 can be combined according to arequired performance. A side chain structure and the like for improvingfilling and planarizing properties and solvent solubility can becombined at a certain ratio.

As an alternative method for obtaining the imide compound of the presentinvention, it is also possible to synthesize the compound by an aromaticsubstitution reaction of bisphenols or bisnaphthols and an imidecompound having a halogen or a nitro group on the aromatic ring in thepresence of a base catalyst as shown below. W₄, n₁, and R₁ in thefollowing formula have the same meanings as defined above, and Xrepresents a halogen or a nitro group.

The base catalyst used above includes inorganic base compounds such assodium hydrogen carbonate, sodium carbonate, potassium carbonate,calcium carbonate, cesium carbonate, sodium hydroxide, potassiumhydroxide, sodium hydride, and potassium phosphate; organic aminecompounds such as triethyl amine, pyridine, lutidine, collidine,N,N-dimethylaniline, and N-methylmorpholine; and the like. These can beused alone or in combination of two or more thereof. The amount ofcatalyst used is within the range of 0.1 to 20 moles relative to thenumber of moles of raw material bisphenols or bisnaphthols, preferably0.2 to 10 moles.

The solvent used in this event is not particularly limited, as long asthe solvent is inactive in the above reaction. Examples of the solventinclude ether-based solvents such as diethyl ether, tetrahydrofuran, anddioxane; aromatic solvents such as benzene, toluene, and xylene;acetonitrile, N-methyl-2-pyrrolidone, N,N-dimethylacetamide,dimethylsulfoxide, N,N-dimethylformamide, and hexamethylphosphorictriamide; and the like. These can be used alone or in mixture. Thesesolvents can be used within a range of 0 to 2,000 parts by mass relativeto 100 parts by mass of the reaction raw materials. The reactiontemperature is preferably −50° C. to approximately the boiling point ofthe solvent, and room temperature to 180° C. is even more preferable.Reaction time is appropriately selected from 0.1 to 100 hours.

As to the reaction method and the collection method for the compounds,the method explained in the description of the amic acid compound can beused.

As described above, the inventive compound for forming an organic filmprovides a material for forming an organic film having heat resistanceto 400° C. or higher and high filling and planarizing properties.

Note that, in the present invention, the term planarizing propertyrefers to a performance of planarizing the surface of a substrate. Forexample, as shown in FIG. 1 , the material for forming an organic filmcontaining the inventive compound for forming an organic film can reducea 100-nm step of a substrate 1 to 30 nm or less by coating the substrate1 with a material 3′ for forming an organic film and heating theresultant to form an organic film 3. Note that the step profile shown inFIG. 1 represents a typical example of the step profile in a substratefor manufacturing a semiconductor device. It is a matter of course thatthe step profile of a substrate which can be planarized by the materialfor forming an organic film containing the inventive compound forforming an organic film is not limited thereto.

<Material for Forming Organic Film>

Further, the present invention provides a material for forming anorganic film which is a composition for forming an organic film,containing: (A) the above-described inventive compound for forming anorganic film and (B) an organic solvent. Note that in the inventivematerial for forming an organic film, the above-described inventivecompound for forming an organic film can be used alone or in combinationof two or more thereof.

The organic solvent that can be used in the inventive material forforming an organic film is not particularly limited as long as thesolvent can dissolve the components contained in materials such as theabove base polymer, an acid generator, a crosslinking agent, otheradditives, and the like. Specifically solvents with a boiling point oflower than 180° C. such as those disclosed in paragraphs (0091) to(0092) of Japanese Patent Laid-Open Publication No. 2007-199653 can beused. Above all, propylene glycol monomethyl ether acetate, propyleneglycol monomethyl ether, 2-heptanone, cyclopentanone, cyclohexanone, anda mixture of two or more thereof are preferably used.

Such a material for forming an organic film can be applied byspin-coating, and has heat resistance to 400° C. or higher and highfilling and planarizing properties because the inventive compound forforming an organic film as described above is incorporated.

Further, the inventive material for forming an organic film may use theorganic solvent in which a high-boiling-point solvent having a boilingpoint of 180° C. or higher is added to the aforementioned solvent havinga boiling point of lower than 180° C. (a mixture of the solvent having aboiling point of lower than 180° C. with the solvent having a boilingpoint of 180° C. or higher). The high-boiling-point organic solvent isnot particularly limited to hydrocarbons, alcohols, ketones, esters,ethers, chlorinated solvents, and so forth, as long as thehigh-boiling-point organic solvent is capable of dissolving the compoundfor forming an organic film. Specific examples of the high-boiling-pointorganic solvent include 1-octanol, 2-ethylhexanol, 1-nonanol, 1-decanol,1-undecanol, ethylene glycol, 1,2-propylene glycol, 1,3-butylene glycol,2,4-pentanediol, 2-methyl-2,4-pentanediol, 2,5-hexanediol,2,4-heptanediol, 2-ethyl-1,3-hexanediol, diethylene glycol, dipropyleneglycol, triethylene glycol, tripropylene glycol, glycerin, n-nonylacetate, ethylene glycol monohexyl ether, ethylene glycolmono-2-ethylhexyl ether, ethylene glycol monophenyl ether, ethyleneglycol monobenzyl ether, diethylene glycol monoethyl ether, diethyleneglycol monoisopropyl ether, diethylene glycol mono-n-butyl ether,diethylene glycol monoisobutyl ether, diethylene glycol monohexyl ether,diethylene glycol monophenyl ether, diethylene glycol monobenzyl ether,diethylene glycol diethyl ether, diethylene glycol dibutyl ether,diethylene glycol butylmethyl ether, triethylene glycol dimethyl ether,triethylene glycol monomethyl ether, triethylene glycol-n-butyl ether,triethylene glycol butylmethyl ether, triethylene glycol diacetate,tetraethylene glycol dimethyl ether, dipropylene glycol monomethylether, dipropylene glycol mono-n-propyl ether, dipropylene glycolmono-n-butyl ether, tripropylene glycol dimethyl ether, tripropyleneglycol monomethyl ether, tripropylene glycol mono-n-propyl ether,tripropylene glycol mono-n-butyl ether, ethylene glycol monoethyl etheracetate, ethylene glycol monobutyl ether acetate, diethylene glycolmonomethyl ether acetate, diethylene glycol monoethyl ether acetate,diethylene glycol monobutyl ether acetate, triacetin, propylene glycoldiacetate, dipropylene glycol monomethyl ether acetate, dipropyleneglycol methyl-n-propyl ether, dipropylene glycol methyl ether acetate,1,4-butanediol diacetate, 1,3-butylene glycol diacetate, 1,6-hexanedioldiacetate, triethylene glycol diacetate, γ-butyrolactone, dihexylmalonate, diethyl succinate, dipropyl succinate, succinate dibutyl,succinate dihexyl, dimethyl adipate, diethyl adipate, dibutyl adipate,and the like. These may be used alone or in mixture thereof.

The boiling point of the high-boiling-point solvent may be appropriatelyselected according to the temperature at which the material for formingan organic film is heated. The boiling point of the high-boiling-pointsolvent to be added is preferably 180° C. to 300° C., more preferably200° C. to 300° C. Such a boiling point prevents the evaporation rate atbaking (heating) from becoming excessive, which would otherwise occur ifthe boiling point is too low. Thus, the boiling point of 180° C. orhigher can provide sufficient thermal flowability. Meanwhile, with sucha boiling point, the boiling point is not too high, so that thehigh-boiling-point solvent evaporates after baking and does not remainin the film; thus, the boiling point of 300° C. or lower does notadversely affect the film physical properties such as etchingresistance.

When the high-boiling-point solvent is used, the formulation amount ofthe high-boiling-point solvent is preferably 1 to 30 parts by mass basedon 100 parts by mass of the solvent having a boiling point of lower than180° C. The formulation amount in this range prevents a failure inproviding sufficient thermal flowability during baking, which wouldotherwise occur if the formulation amount is too small. In addition,deterioration of the film physical properties such as etching resistanceis prevented, which would otherwise occur if the formulation amount isso large that the solvent remains in the film.

With such a material for forming an organic film, the above-describedcompound for forming an organic film is provided with thermalflowability by adding the high-boiling-point solvent, so that thematerial for forming an organic film also has higher filling andplanarizing properties.

In the inventive material for forming an organic film, (C) an acidgenerator can be added so as to further promote the curing reaction. Theacid generator includes a material that generates an acid by thermaldecomposition, and a material that generates an acid by lightirradiation. Any acid generator can be added. Specifically, materialsdisclosed in paragraphs (0061) to (0085) of Japanese Patent Laid-OpenPublication No. 2007-199653 can be added, but the present invention isnot limited thereto.

The acid generators can be used alone or in combination of two or morethereof. When the acid generator is added, the added amount ispreferably 0.05 to 50 parts, more preferably 0.1 to 10 parts, based on100 parts of the compound for forming an organic film.

To the inventive material for forming an organic film, (D) a surfactantcan be added so as to enhance the coating property in spin coating.Examples of the surfactant include those disclosed in (0142) to (0147)of Japanese Patent Laid-Open Publication No. 2009-269953 can be used.

Moreover, to the inventive material for forming an organic film, (E) acrosslinking agent can also be added so as to increase the curabilityand to further suppress intermixing with an upper layer film. Thecrosslinking agent is not particularly limited, and known various typesof crosslinking agents can be widely used. Examples thereof includemelamine-based crosslinking agents, glycoluril-based crosslinkingagents, benzoguanamine-based crosslinking agents, urea-basedcrosslinking agents, p-hydroxyalkylamide-based crosslinking agents,isocyanurate-based crosslinking agents, aziridine-based crosslinkingagents, oxazoline-based crosslinking agents, and epoxy-basedcrosslinking agents.

Specific examples of the melamine-based crosslinking agents includehexamethoxymethylated melamine, hexabutoxymethylated melamine, alkoxy-and/or hydroxy-substituted derivatives thereof, and partialself-condensates thereof. Specific examples of the glycoluril-basedcrosslinking agents include tetramethoxymethylated glycoluril,tetrabutoxymethylated glycoluril, alkoxy- and/or hydroxy-substitutedderivatives thereof, and partial self-condensates thereof. Specificexamples of the benzoguanamine-based crosslinking agents includetetramethoxymethylated benzoguanamine, tetrabutoxymethylatedbenzoguanamine, alkoxy- and/or hydroxy-substituted derivatives thereof,and partial self-condensates thereof. Specific examples of theurea-based crosslinking agents include dimethoxymethylateddimethoxyethyleneurea, alkoxy- and/or hydroxy-substituted derivativesthereof, and partial self-condensates thereof. A specific example of theβ-hydroxyalkylamide-based crosslinking agents includesN,N,N′,N′-tetra(2-hydroxyethyl)adipic acid amide. Specific examples ofthe isocyanurate-based crosslinking agents include triglycidylisocyanurate and triallyl isocyanurate. Specific examples of theaziridine-based crosslinking agents include4,4′-bis(ethyleneiminocarbonylamino)diphenylmethane and2,2-bishydroxymethylbutanol-tris[3-(1-aziridinyl)propionate]. Specificexamples of the oxazoline-based crosslinking agents include2,2′-isopropylidene bis(4-benzyl-2-oxazoline), 2,2′-isopropylidenebis(4-phenyl-2-oxazoline), 2,2′-methylenebis4,5-diphenyl-2-oxazoline,2,2′-methylenebis-4-phenyl-2-oxazoline,2,2′-methylenebis-4-tert-butyl-2-oxazoline, 2,2′-bis(2-oxazoline),1,3-phenylenebis(2-oxazoline), 1,4-phenylenebis(2-oxazoline), and a2-isopropenyloxazoline copolymer. Specific examples of the epoxy-basedcrosslinking agents include diglycidyl ether, ethylene glycol diglycidylether, 1,4-butanediol diglycidyl ether, 1,4-cyclohexanedimethanoldiglycidyl ether, poly(glycidyl methacrylate), trimethylolethanetriglycidyl ether, trimethylolpropane triglycidyl ether, andpentaerythritol tetraglycidyl ether.

Further, to the inventive material for forming an organic film, (F) aplasticizer can be added so as to further enhance the planarizing andfilling properties. The plasticizer is not particularly limited, andknown various types of plasticizers can be widely used. Examples thereofinclude low-molecular-weight compounds such as phthalic acid esters,adipic acid esters, phosphoric acid esters, trimellitic acid esters, andcitric acid esters; and polymers such as polyethers, polyesters, andpolyacetal-based polymers disclosed in Japanese Patent Laid-OpenPublication No. 2013-253227.

Particularly, like the plasticizer, as an additive for providing theinventive material for forming an organic film with filling andplanarizing properties, it is preferable to use, for example, liquidadditives having polyethylene glycol and polypropylene glycolstructures, or thermo-decomposable polymers having a weight loss ratiobetween 30° C. and 250° C. of 40 mass % or more and a weight averagemolecular weight of 300 to 200,000. The thermo-decomposable polymerspreferably contain a repeating unit having an acetal structure shown bythe following general formula (DP1) or (DP1a).

(where R₆ represents a hydrogen atom or a saturated or unsaturatedmonovalent organic group having 1 to 30 carbon atoms which may besubstituted. Y₁ represents a saturated or unsaturated divalent organicgroup having 2 to 30 carbon atoms.)

(where R_(6a) represents an alkyl group having 1 to 4 carbon atoms.Y^(a) represents a saturated or unsaturated divalent hydrocarbon grouphaving 4 to 10 carbon atoms which may have an ether bond. n representsan average repeating unit number of 3 to 500.)

As described above, the inventive material for forming an organic filmis a material for forming an organic film having heat resistance to 400°C. or higher and high filling and planarizing properties. Thus, theinventive material for forming an organic film is extremely useful as anorganic film material in multilayer resist methods such as a 2-layerresist method, a 3-layer resist method using a silicon-containing resistmiddle layer film or a silicon-containing inorganic hard mask, and a4-layer resist method using a silicon-containing resist middle layerfilm or a silicon-containing inorganic hard mask and an organicantireflective film. Moreover, the inventive material for forming anorganic film generates no by-product even during film formation in aninert gas, and has excellent filling and planarizing properties.Accordingly, the inventive material for forming an organic film can alsobe suitably used as a planarizing material in a semiconductor devicemanufacturing process, besides the multilayer resist methods.

Additionally, the present invention provides a substrate formanufacturing a semiconductor device, including an organic film on thesubstrate, the organic film being formed by curing the above-describedmaterial for forming an organic film.

The organic film of the present invention has both high filling andplanarizing properties, and accordingly, the organic film does not havefine pores due to insufficient filling or asperity in the organic filmsurface due to insufficient planarizing property. A semiconductor devicesubstrate planarized by the organic film of the present invention has anincreased process margin at patterning, making it possible tomanufacture semiconductor devices with high yields.

<Method for Forming Organic Film>

The film formation step by heating to form an organic underlayer filmcan employ 1-stage baking, 2-stage baking, or multi-stage baking ofthree or more stages. Nevertheless, the 1-stage baking or the 2-stagebaking is economically preferable. The film formation by the 1-stagebaking is, for example, performed at a temperature of 100° C. or higherto 600° C. or lower within a range of 5 to 3600 seconds, and preferablyat a temperature of 150° C. or higher to 500° C. or lower within a rangeof 10 to 7200 seconds. Heating under such conditions can promote theplanarization attributable to thermal flow and the crosslinkingreaction. In a multilayer resist method, a coating-type silicon middlelayer film or a CVD hard mask is sometimes formed on a film obtained asdescribed above. In the case where a coating-type silicon middle layerfilm is employed, the film formation is performed preferably at atemperature higher than a temperature at which the silicon middle layerfilm is formed. Generally, a silicon middle layer film is formed at 100°C. or higher to 400° C. or lower, preferably 150° C. or higher to 350°C. or lower. Forming the organic underlayer film at a temperature higherthan these temperatures makes it possible to prevent a composition forforming the silicon middle layer film from dissolving the organicunderlayer film, and to form an organic film not mixed with thecomposition.

In the case where a CVD hard mask is employed, the organic underlayerfilm is formed preferably at a temperature higher than a temperature atwhich the CVD hard mask is formed. Examples of the temperature at whichthe CVD hard mask is formed include temperatures at 150° C. or higher to500° C. or lower.

On the other hand, in the film formation by the 2-stage baking, thefirst baking is performed in air with a temperature having an upperlimit of, for example, 300° C. or lower, preferably 250° C. or lower,within a range of 10 to 600 seconds, considering the influence of oxygenin air on the substrate corrosion. The second baking temperature ishigher than the first baking temperature, and the second baking isperformed at a temperature of 600° C. or lower, preferably 500° C. orlower, within a range of preferably 10 to 7200 seconds. In a multilayerresist method, a coating-type silicon middle layer film or a CVD hardmask is sometimes formed on a film obtained as described above. In thecase where a coating-type silicon middle layer film is employed, thefilm formation is performed preferably at a temperature higher than atemperature at which the silicon middle layer film is formed. Generally,a silicon middle layer film is formed at 100° C. or higher to 400° C. orlower, preferably 150° C. or higher to 350° C. or lower. Forming theorganic underlayer film at a temperature higher than these temperaturesmakes it possible to prevent a composition for forming the siliconmiddle layer film from dissolving the organic underlayer film, and toform an organic film not mixed with the composition.

In the case where a CVD hard mask is employed in the 2-stage baking, theorganic underlayer film is formed preferably at a temperature higherthan a temperature at which the CVD hard mask is formed. Examples of thetemperature at which the CVD hard mask is formed include temperatures at150° C. or higher to 500° C. or lower.

Furthermore, the present invention provides a method for forming anorganic film that functions as an organic underlayer film used in asemiconductor device manufacturing process. In order to preventcorrosion of a substrate to be processed, the method includes heatingthe substrate to be processed under an atmosphere with an oxygenconcentration of 1% or less, thereby forming a cured film.

In this method for forming an organic film, for example, first of all, asubstrate to be processed is spin-coated with the above-describedinventive material for forming an organic film. After the spin coating,in the 2-stage baking, first, baking is performed in air at 300° C. orlower. Then, the second baking is performed under an atmosphere with anoxygen concentration of 1% or less. In the 1-stage baking, the firstbaking in air can be skipped. Note that examples of the atmosphereduring the baking include such inert gases as nitrogen, argon, andhelium. The inventive material for forming an organic film is capable offorming a sufficiently cured organic film without generating asublimation product, even when the baking is performed under such aninert gas atmosphere.

Meanwhile, the inventive methods for forming an organic film make itpossible to use a substrate to be processed having a structure or a stepwith a height of 30 nm or more. As described above, since the inventivematerial for forming an organic film is excellent in filling andplanarizing properties, even when the substrate to be processed has astructure or a step (asperity) with a height of 30 nm or more, a flatcured film can be formed. Specifically, the inventive method for formingan organic film is particularly useful when a flat organic film isformed on such a substrate to be processed.

Note that the thickness of the organic film to be formed isappropriately selected, but is preferably 30 to 20,000 nm, particularlypreferably 50 to 15,000 nm.

Additionally, the above-described methods for forming an organic filmare applicable, using the inventive material for forming an organicfilm, to both cases where an organic film for an organic underlayer filmis formed, and where an organic film for a flat film is formed.

The present invention provides a method for forming an organic filmemployed in a semiconductor device manufacturing process, the methodincluding:

spin-coating a substrate to be processed with the above material forforming an organic film; and

heating the substrate to be processed coated with the material forforming an organic film under an inert gas atmosphere at a temperatureof 50° C. or higher to 600° C. or lower within a range of 10 seconds to7200 seconds to obtain a cured film.

Further, the present invention provides a method for forming an organicfilm employed in a semiconductor device manufacturing process, themethod including:

spin-coating a substrate to be processed with the above material forforming an organic film;

heating the substrate to be processed coated with the material forforming an organic film in air at a temperature of 50° C. or higher to250° C. or lower within a range of 5 seconds to 600 seconds, preferably10 to 600 seconds to form a coating film; and

then heating under an inert gas atmosphere at a temperature of 200° C.or higher to 600° C. or lower, preferably 250° C. or higher within arange of 10 seconds to 7200 seconds to obtain a cured film.

An organic film employed in a semiconductor device manufacturing processformed by the inventive method has high heat resistance and high fillingand planarizing properties, and allows a favorable semiconductor deviceyield when used in a semiconductor device manufacturing process.

In these methods for forming an organic film, first, a substrate to beprocessed is spin-coated with the above-described inventive material forforming an organic film. By employing the spin coating method, favorablefilling property can be obtained. After the spin coating, baking(heating) is performed to promote the planarization attributable tothermal flow and the crosslinking reaction. Note that since this bakingallows the solvent in the material for forming an organic film toevaporate, even when a resist upper layer film or a silicon-containingresist middle layer film is formed on the organic film, the mixing canbe prevented.

<Patterning Processes>

[3-Layer Resist Method Using Silicon-Containing Resist Middle LayerFilm]

Furthermore, the present invention provides a patterning processincluding:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming a silicon-containing resist middle layer film on the organicfilm from a silicon-containing resist middle layer film material;

forming a resist upper layer film on the silicon-containing resistmiddle layer film from a photoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the silicon-containing resist middle layerfilm by etching using the resist upper layer film having the formedpattern as a mask;

transferring the pattern to the organic film by etching using thesilicon-containing resist middle layer film having the transferredpattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

As the body to be processed, it is preferable to use a semiconductordevice substrate or the semiconductor device substrate coated with anyof a metal film, a metal carbide film, a metal oxide film, a metalnitride film, a metal oxycarbide film, and a metal oxynitride film. Morespecifically, examples of the body which may be used include, but arenot particularly limited to: substrates made of Si, α-Si, p-Si, SiO₂,SiN, SiON, W, TiN, Al, or the like; and these substrates coated with theabove-described metal film or the like as a layer to be processed.

As the layer to be processed, used are various Low-k films made of Si,SiO₂, SiON, SiN, p-Si, α-Si, W, W—Si, Al, Cu, Al—Si, or the like, andstopper films thereof. The layer can be formed to have a thickness ofgenerally 50 to 10,000 nm, particularly 100 to 5,000 nm. Note that whenthe layer to be processed is formed, the substrate and the layer to beprocessed are formed from different materials.

Note that the metal of the body to be processed is preferably silicon,titanium, tungsten, hafnium, zirconium, chromium, germanium, copper,silver, gold, aluminum, indium, gallium, arsenic, palladium, iron,tantalum, iridium, cobalt, manganese, molybdenum, or an alloy thereof.

Further, as the body to be processed, a substrate to be processed havinga structure or a step with a height of 30 nm or more is preferably used.

When the organic film is formed on the body to be processed from theinventive material for forming an organic film, the above-describedinventive methods for forming an organic film can be employed.

Next, using a resist middle layer film material containing siliconatoms, a resist middle layer film (silicon-containing resist middlelayer film) is formed on the organic film. The silicon-containing resistmiddle layer film material is preferably a polysiloxane-based middlelayer film material. The silicon-containing resist middle layer filmhaving antireflective effect can suppress the reflection. Particularly,for 193-nm light exposure, a material containing many aromatic groupsand having a high etching selectivity relative to the substrate is usedas a material for forming an organic film, so that the k-value and thusthe substrate reflection are increased; in contrast, the reflection canbe suppressed by imparting absorption to the silicon-containing resistmiddle layer film so as to have an appropriate k-value, and thesubstrate reflection can be reduced to 0.5% or less. As thesilicon-containing resist middle layer film having antireflectiveeffect, a polysiloxane is preferably used which has anthracene for248-nm and 157-nm light exposure, or a phenyl group or a light-absorbinggroup having a silicon-silicon bond for 193-nm light exposure in apendant structure or a polysiloxane structure, and which is crosslinkedby an acid or heat.

Next, using a resist upper layer film material composed of a photoresistcomposition, a resist upper layer film is formed on thesilicon-containing resist middle layer film. The resist upper layer filmmaterial may be a positive type or a negative type, and anygenerally-used photoresist composition can be used. After the spincoating of the resist upper layer film material, pre-baking ispreferably performed within ranges of 60 to 180° C. and 10 to 300seconds. Then, light exposure, post-exposure bake (PEB), and developmentare performed according to conventional methods to obtain a resist upperlayer film pattern. Note that the thickness of the resist upper layerfilm is not particularly limited, but is preferably 30 to 500 nm,particularly preferably 50 to 400 nm.

Next, a circuit pattern (the resist upper layer film pattern) is formedin the resist upper layer film. The circuit pattern is preferably formedby a lithography using light with a wavelength ranging from 10 nm ormore to 300 nm or less, a direct drawing by electron beam, ananoimprinting, or a combination thereof.

Note that the exposure light includes high energy beam with a wavelengthof 300 nm or less; specifically, deep ultraviolet ray, KrF excimer laserbeam (248 nm), ArF excimer laser beam (193 nm), F₂ laser beam (157 nm),Kr₂ laser beam (146 nm), Ar₂ laser beam (126 nm), soft X-ray (EUV) witha wavelength of 3 to 20 nm, electron beam (EB), ion beam, X-ray, and thelike.

Additionally, in forming the circuit pattern, the circuit pattern ispreferably developed by alkaline development or development with anorganic solvent.

Next, using the resist upper layer film having the formed circuitpattern as a mask, the pattern is transferred to the silicon-containingresist middle layer film by etching. The etching of thesilicon-containing resist middle layer film using the resist upper layerfilm pattern as a mask is preferably performed with a fluorocarbon-basedgas. Thereby, a silicon-containing resist middle layer film pattern isformed.

Next, using the silicon-containing resist middle layer film having thetransferred pattern as a mask, the pattern is transferred to the organicfilm by etching. Since the silicon-containing resist middle layer filmexhibits higher etching resistance to an oxygen gas or a hydrogen gasthan an organic compound, the etching of the organic film using thesilicon-containing resist middle layer film pattern as a mask ispreferably performed with an etching gas mainly containing an oxygen gasor a hydrogen gas. Thereby, an organic film pattern can be formed.

Next, using the organic film having the transferred pattern as a mask,the pattern is transferred to the body to be processed by etching. Thesubsequent etching of the body to be processed (layer to be processed)can be performed according to a conventional method. For example, thebody to be processed made of SiO₂, SiN, or silica low-dielectricinsulating film is etched mainly with a fluorocarbon-based gas. The bodyto be processed made of p-Si, Al, or W is etched mainly with a chlorine-or bromine-based gas. When the substrate is processed by etching with afluorocarbon-based gas, the silicon-containing resist middle layer filmpattern is removed together with the substrate processing. Meanwhile,when the substrate is processed by etching with a chlorine- orbromine-based gas, the silicon-containing resist middle layer filmpattern needs to be removed by additional dry etching with afluorocarbon-based gas after the substrate processing.

The organic film obtained from the inventive material for forming anorganic film can exhibit excellent etching resistance when the body tobe processed is etched as described above.

[4-Layer Resist Method Using Silicon-Containing Resist Middle Layer Filmand Organic Antireflective Film]

Furthermore, the present invention provides a patterning processincluding:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming a silicon-containing resist middle layer film on the organicfilm from a silicon-containing resist middle layer film material;

forming an organic antireflective film on the silicon-containing resistmiddle layer film;

forming a resist upper layer film on the organic antireflective filmfrom a photoresist composition, so that a 4-layered film structure isconstructed; forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic antireflective film and thesilicon-containing resist middle layer film by etching using the resistupper layer film having the formed pattern as a mask;

transferring the pattern to the organic film by etching using thesilicon-containing resist middle layer film having the transferredpattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

Note that this method can be performed in the same manner as theabove-described 3-layer resist method using the silicon-containingresist middle layer film, except that the organic antireflective film(BARC) is formed between the silicon-containing resist middle layer filmand the resist upper layer film.

The organic antireflective film can be formed by spin coating from aknown organic antireflective film material.

[3-Layer Resist Method Using Inorganic Hard Mask]

Furthermore, the present invention provides a patterning processincluding:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming an inorganic hard mask selected from a silicon oxide film, asilicon nitride film, a silicon oxynitride film, a titanium oxide film,and a titanium nitride film on the organic film;

forming a resist upper layer film on the inorganic hard mask from aphotoresist composition;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the inorganic hard mask by etching using theresist upper layer film having the formed pattern as a mask;

transferring the pattern to the organic film by etching using theinorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

Note that this method can be performed in the same manner as theabove-described 3-layer resist method using the silicon-containingresist middle layer film, except that the inorganic hard mask is formedin place of the silicon-containing resist middle layer film on theorganic film.

The inorganic hard mask selected from a silicon oxide film, a siliconnitride film, and a silicon oxynitride film (SiON film) can be formed bya CVD method, an ALD method, or the like. The method for forming thesilicon nitride film is disclosed in, for example, Japanese PatentLaid-Open Publication No. 2002-334869, International Publication No.2004/066377, and so forth. The film thickness of the inorganic hard maskis preferably 5 to 200 nm, more preferably 10 to 100 nm. As theinorganic hard mask, a SiON film is most preferably used which iseffective as an antireflective film. When the SiON film is formed, thesubstrate temperature reaches 300 to 500° C. Hence, the underlayer filmneeds to withstand the temperature of 300 to 500° C. Since the organicfilm formed from the inventive material for forming an organic film hashigh heat resistance and can withstand high temperatures of 300° C. to500° C., this enables the combination of the inorganic hard mask formedby a CVD method or an ALD method with the organic film formed by a spincoating method.

[4-Layer Resist Method Using Inorganic Hard Mask and OrganicAntireflective Film]

Furthermore, the present invention provides a patterning processincluding:

forming an organic film on a body to be processed from the abovematerial for forming an organic film;

forming an inorganic hard mask selected from a silicon oxide film, asilicon nitride film, a silicon oxynitride film, a titanium oxide film,and a titanium nitride film on the organic film;

forming an organic antireflective film on the inorganic hard mask;forming a resist upper layer film on the organic antireflective filmfrom a photoresist composition, so that a 4-layered film structure isconstructed;

forming a circuit pattern in the resist upper layer film;

transferring the pattern to the organic antireflective film and theinorganic hard mask by etching using the resist upper layer film havingthe formed pattern as a mask;

transferring the pattern to the organic film by etching using theinorganic hard mask having the transferred pattern as a mask; and

further transferring the pattern to the body to be processed by etchingusing the organic film having the transferred pattern as a mask.

Note that this method can be performed in the same manner as theabove-described 3-layer resist method using the inorganic hard mask,except that the organic antireflective film (BARC) is formed between theinorganic hard mask and the resist upper layer film.

Particularly, when the SiON film is used as the inorganic hard mask, twoantireflective films including the SiON film and the BARC make itpossible to suppress the reflection even in liquid immersion exposure ata high NA exceeding 1.0. Another merit of the BARC formation is havingan effect of reducing footing of the resist upper layer film patternimmediately above the SiON film.

Herein, FIG. 2(A) to (F) show an example of the inventive patterningprocess according to the 3-layer resist method. In the 3-layer resistmethod as shown in FIG. 2(A), using the inventive material for formingan organic film, an organic film 3 is formed on a layer 2 to beprocessed formed on a substrate 1. Then, a silicon-containing resistmiddle layer film 4 is formed on the organic film 3, and a resist upperlayer film 5 is formed on the silicon-containing resist middle layerfilm 4. Subsequently, as shown in FIG. 2(B), an exposed portion 6 of theresist upper layer film 5 is exposed to light, followed by PEB(post-exposure bake). Thereafter, as shown in FIG. 2(C), a resist upperlayer film pattern 5 a is formed by development. After that, as shown inFIG. 2(D), using the resist upper layer film pattern 5 a as a mask, thesilicon-containing resist middle layer film 4 is processed by dryetching with a fluorocarbon-based gas. Thereby, a silicon-containingresist middle layer film pattern 4 a is formed. Then, as shown in FIG.2(E), after the resist upper layer film pattern 5 a is removed, theorganic film 3 is etched with oxygen plasma using the silicon-containingresist middle layer film pattern 4 a as a mask. Thereby, an organic filmpattern 3 a is formed. Further, as shown in FIG. 2(F), after thesilicon-containing resist middle layer film pattern 4 a is removed, thelayer to be processed 2 is processed by etching using the organic filmpattern 3 a as a mask. Thus, a pattern 2 a is formed.

In the case where an inorganic hard mask is formed, thesilicon-containing resist middle layer film 4 may be replaced with theinorganic hard mask. In the case where a BARC is formed, the BARC may beformed between the silicon-containing resist middle layer film 4 and theresist upper layer film 5. The BARC may be etched continuously andbefore the etching of the silicon-containing resist middle layer film 4.Alternatively, after the BARC is etched alone, the silicon-containingresist middle layer film 4 may be etched, for example, after an etchingapparatus is changed.

As described above, the inventive patterning processes make it possibleto precisely form a fine pattern in a body to be processed by themultilayer resist methods.

EXAMPLE

Hereinafter, the present invention will be more specifically describedby referring to Synthesis Examples, Comparative Synthesis Examples,Examples, and Comparative Examples. However, the present invention isnot limited thereto. Note that, with respect to molecular weight anddispersity, weight average molecular weight (Mw) and number averagemolecular weight (Mn) were measured by gel permeation chromatography(GPC) using tetrahydrofuran as an eluent in terms of polystyrene, anddispersity (Mw/Mn) was calculated therefrom.

Synthesis Examples: Synthesis of Compounds Used in Organic Film Material

Compounds (A1) to (A19) used in an organic film material weresynthesized using aniline derivatives B: (B1) to (B5) andtetracarboxylic dianhydrides C: (C1) to (C11) shown below.

Aniline Derivatives:

Tetracarboxylic dianhydrides:

For example, in the case where a tetracarboxylic dianhydride (C1) and ananiline derivative (B1) are used to manufacture an amic acid compound,the following three types (1) to (3) of isomeric structure are possible.Therefore, for amic acid compounds and amic acid ester compounds derivedfrom an amic acid having a similar isomeric structure, one kind ofisomeric structure has been expressed as a representative structure.

[Synthesis Example 1] Synthesis of Compound (A1)

A homogeneous solution was formed by adding 100 g ofN-methyl-2-pyrrolidone to 15.51 g of (C1) under a nitrogen atmosphere atan inner temperature of 40° C. Then, 11.72 g of (B1) dissolved in 30 gof N-methyl-2-pyrrolidone beforehand was slowly added dropwise, and thereaction was allowed to proceed at an inner temperature of 40° C. for 3hours to obtain an amic acid solution. 3.96 g of pyridine was added tothe obtained amic acid solution, and 12.25 g of acetic anhydride wasfurther added dropwise slowly. Then, the reaction was allowed to proceedat an inner temperature of 60° C. for 4 hours for imidization. Aftercompletion of the reaction, the solution was cooled to room temperature,300 g of methyl isobutyl ketone was added, the organic layer was washedwith 100 g of 3% nitric acid aqueous solution. Then, the organic layerwas further washed six times with 100 g of pure water and was evaporatedunder reduced pressure to dryness. To the residue, 100 g of THF(tetrahydrofuran) was added, and a homogeneous solution was formed.Thereafter, a crystal was precipitated with 500 g of methanol. Theprecipitated crystal was separated by filtration, washed twice with 300g of methanol, and collected. The collected crystal was vacuum dried at70° C. Thus, (A1) was obtained. When the weight average molecular weight(Mw) and dispersity (Mw/Mn) were measured by GPC, the following resultswere obtained.

(A1): Mw=540, Mw/Mn=1.01

[Synthesis Examples 2 to 14] Synthesis of Compounds (A2) to (A14)

Compounds (A2) to (A14) as shown in Table 1 were obtained as productsunder the same reaction conditions as those in Synthesis Example 1,except that the aniline derivatives and the tetracarboxylic dianhydrideshown in Table 1 were used. The weight average molecular weight (Mw) anddispersity (Mw/Mn) of these compounds were measured and shown in Table2.

TABLE 1 Synthesis Example Compounds B Compounds C Product 1 B1: 11.72 gC1: 15.51 g A1 2 B2: 11.72 g C2: 15.51 g A2 3 B3: 13.12 g C3: 16.11 g A34 B4: 11.60 g C4: 13.33 g A4 5 B5: 11.81 g C5: 15.91 g A5 6 B1: 5.86 gC6: 17.91 g A6 B4: 9.66 g 7 B1: 5.86 g C7: 22.92 g A7 B2: 5.86 g 8 B4:11.60 g C8: 13.75 g A8 9 B1: 11.72 g C9: 26.02 g A9 10 B1: 5.86 g C9:26.02 g A10 B2: 5.86 g 11 B3: 13.12 g C10: 31.42 g A11 12 B1: 11.72 gC11: 32.13 g A12 13 B2: 11.72 g C11: 32.13 g A13 14 B2: 11.72 g C9:13.01 g A14 C11: 16.07 g

[Synthesis Example 15] Synthesis of Compound (A15)

A homogeneous solution was formed by adding 100 g ofN-methyl-2-pyrrolidone to 32.23 g of tetracarboxylic dianhydride (C11)under a nitrogen atmosphere at an inner temperature of 40° C. Then,11.72 g of (B1)dissolved in 30 g of N-methyl-2-pyrrolidone beforehandwas slowly added dropwise, and the reaction was allowed to proceed at aninner temperature of 40° C. for 3 hours to obtain an amic acid solution.After completion of the reaction, the solution was cooled to roomtemperature, 300 g of methyl isobutyl ketone was added, the organiclayer was washed with 100 g of a 3% nitric acid aqueous solution. Then,the organic layer was further washed six times with 100 g of pure waterand was evaporated under reduced pressure to dryness. To the residue,100 g of THF was added, and a homogeneous solution was formed.Thereafter, a crystal was precipitated in 500 g of hexane. Theprecipitated crystal was separated by filtration, washed twice with 300g of hexane, and collected. The collected crystal was vacuum dried at70° C. Thus, (A15) was obtained. When the weight average molecularweight (Mw) and dispersity (Mw/Mn) were measured by GPC, the followingresults were obtained.

(A15): Mw=940, Mw/Mn=1.03

[Synthesis Example 16] Synthesis of Compound (A16)

A homogeneous dispersion was formed from 10.00 g of the compound (A15),4.16 g of potassium carbonate, and 50 g of N-methyl-2-pyrrolidone undera nitrogen atmosphere at an inner temperature of 50° C. 3.75 g ofn-butyl bromide was slowly added dropwise, and the reaction was allowedto proceed at an inner temperature of 50° C. for 16 hours. After coolingto room temperature, 100 g of methyl isobutyl ketone and 50 g of purewater were added for homogenization, then, the aqueous layer wasremoved. Further, the organic layer was washed twice with 30 g of a 3.0%nitric acid aqueous solution and five times with 30 g of pure water. Theorganic layer was evaporated under reduced pressure to dryness. To theresidue, 30 g of THF was added, and a crystal was precipitated with 100g of methanol. The precipitated crystal was separated by filtration,washed twice with 60 g of methanol, and collected. The collected crystalwas vacuum dried at 70° C. Thus, (A16) was obtained. When the weightaverage molecular weight (Mw) and dispersity (Mw/Mn) were measured byGPC, the following results were obtained.

(A16): Mw=990, Mw/Mn=1.04

Compounds (A17) to (A21) used in an organic film material weresynthesized using the compounds (D1) to (D8) shown below and theabove-described (B1) and (B2). Note that for (D3), a 60:40 isomericmixture was used.

[Synthesis Example 17] Synthesis of Compound (A17)

A homogeneous solution was formed by adding 100 g of THF to 21.01 g ofthe compound (D6) under a nitrogen atmosphere in an ice-bath. 10.00 g ofthe compound (D1) and 11.12 g of triethyl amine dissolved in a mixedsolvent of 20 g of N-methyl-2-pyrrolidone and 20 g of THF beforehandwere slowly added dropwise, then the reaction was allowed to proceed atroom temperature for 1 hour. Further, 11.70 g of an aniline derivative(B2) was slowly added dropwise to the reaction solution, and thereaction was allowed to proceed at room temperature for 3 hours toobtain an amic acid solution. 3.95 g of pyridine was added to theobtained amic acid solution, and 12.25 g of acetic anhydride was furtheradded dropwise slowly. Then, the reaction was allowed to proceed at aninner temperature of 60° C. for 4 hours for imidization. Aftercompletion of the reaction, 300 g of methyl isobutyl ketone was added,then, while cooling in an ice-bath, 120 g of 5% aqueous hydrochloricacid solution was slowly added, and the reaction was quenched. Afterquenching, the aqueous layer was removed, the organic layer was washedsix times with 100 g of 3% nitric acid aqueous solution and 100 g ofpure water. Then the organic layer was evaporated under reduced pressureto dryness. After a homogeneous solution was formed by adding 100 g ofTHF to the residue, a crystal was precipitated with 500 g of methanol.The precipitated crystal was separated by filtration, washed twice with300 g of methanol, and collected. The collected crystal was vacuum driedat 70° C. Thus, (A17) was obtained. When the weight average molecularweight (Mw) and dispersity (Mw/Mn) were measured by GPC, the followingresults were obtained.

(A17): Mw=1010, Mw/Mn=1.04

[Synthesis Example 18] Synthesis of Compound (A18)

A homogeneous solution was formed by adding 60 g of THF to 12.07 g ofthe compound (D6) under a nitrogen atmosphere in an ice-bath. 10.00 g ofthe compound (D2) and 6.39 g of triethyl amine dissolved in 60 g of THFbeforehand were slowly added dropwise, then the reaction was allowed toproceed at room temperature for 1 hour. Further, 6.72 g of an anilinederivative (B1) was slowly added dropwise to the reaction solution, andthe reaction was allowed to proceed at room temperature for 3 hours toobtain an amic acid solution. After diluting the obtained amic acidsolution with 40 g of N-methyl-2-pyrrolidone and adding 2.27 g ofpyridine, 7.04 g of acetic anhydride was slowly added dropwise, and thereaction was allowed to proceed at an inner temperature of 60° C. for 4hours for imidization. After completion of the reaction, 200 g of methylisobutyl ketone was added, then, while cooling in an ice-bath, 80 g of5% aqueous hydrochloric acid solution was slowly added, and the reactionwas quenched. After quenching, the aqueous layer was removed, theorganic layer was washed six times with 60 g of 3% nitric acid aqueoussolution and 60 g of pure water. Then the organic layer was evaporatedunder reduced pressure to dryness. After a homogeneous solution wasformed by adding 60 g of THF to the residue, a crystal was precipitatedwith 350 g of methanol. The precipitated crystal was separated byfiltration, washed twice with 200 g of methanol, and collected. Thecollected crystal was vacuum dried at 70° C. Thus, (A18) was obtained.When the weight average molecular weight (Mw) and dispersity (Mw/Mn)were measured by GPC, the following results were obtained.

(A18): Mw=1110, Mw/Mn=1.04

[Synthesis Example 19] Synthesis of Compound (A19)

A homogeneous solution was formed by adding 100 g of THF to 15.79 g ofthe compound (D6) under a nitrogen atmosphere in an ice-bath. 10.00 g ofthe compound (D3) and 8.36 g of triethyl amine dissolved in 60 g of THFbeforehand were slowly added dropwise, then the reaction was allowed toproceed at room temperature for 1 hour. Further, 8.80 g of an anilinederivative (B2) was slowly added dropwise to the reaction solution, andthe reaction was allowed to proceed at room temperature for 3 hours toobtain an amic acid solution. 2.97 g of pyridine was added to theobtained amic acid solution, and 9.21 g of acetic anhydride was furtheradded dropwise slowly. Then, the reaction was allowed to proceed at aninner temperature of 60° C. for 4 hours for imidization. Aftercompletion of the reaction, 400 g of methyl isobutyl ketone was added,then, while cooling in an ice-bath, 100 g of 5% aqueous hydrochloricacid solution was slowly added, and the reaction was quenched. Afterquenching, the aqueous layer was removed, the organic layer was washedsix times with 100 g of 3% nitric acid aqueous solution and 100 g ofpure water. Then the organic layer was evaporated under reduced pressureto dryness. After a homogeneous solution was formed by adding 80 g ofTHF to the residue, a crystal was precipitated with 400 g of diisopropylether. The precipitated crystal was separated by filtration, washedtwice with 250 g of diisopropyl ether, and collected. The collectedcrystal was vacuum dried at 70° C. Thus, (A19) was obtained. When theweight average molecular weight (Mw) and dispersity (Mw/Mn) weremeasured by GPC, the following results were obtained.

(A19): Mw=960, Mw/Mn=1.06

[Synthesis Example 20] Synthesis of Compound (A20)

A homogeneous solution was formed by adding 120 g ofN-methyl-2-pyrrolidone to 10.00 g of compound (D4) and 15.31 g ofcompound (D7) under a nitrogen atmosphere at room temperature. Aftermaking sure of the dissolution, 18.85 g of DMT-MM(4-(4,6-dimethoxy-1,3,5-triazine-2-yl) containing 15.1 wt % of water wasadded, and the reaction was allowed to proceed at room temperature for24 hours. After completion of the reaction, 300 g of methyl isobutylketone was added, then, while cooling in an ice-bath, 100 g of 5%aqueous hydrochloric acid solution was slowly added, and the reactionwas quenched. After quenching, the aqueous layer was removed, theorganic layer was washed six times with 100 g of 3% aqueous hydrochloricacid solution and 100 g of pure water. Then the organic layer wasevaporated under reduced pressure to dryness. After a homogeneoussolution was formed by adding 60 g of THF to the residue, a crystal wasprecipitated with 300 g of diisopropyl ether. The precipitated crystalwas separated by filtration, washed twice with 200 g of diisopropylether, and collected. The collected crystal was vacuum dried at 70° C.Thus, (A20) was obtained. When the weight average molecular weight (Mw)and dispersity (Mw/Mn) were measured by GPC, the following results wereobtained.

(A20): Mw=1010, Mw/Mn=1.04

[Synthesis Example 21] Synthesis of Compound (A21)

A homogeneous dispersion was formed by adding 120 g ofN-methyl-2-pyrrolidone to 10.00 g of the compound (D5), 25.95 g of thecompound (D8), and 15.34 g of potassium carbonate under a nitrogenatmosphere at an inner temperature of 40° C. The reaction was allowed toproceed directly at an inner temperature of 40° C. for 24 hours. 400 gof methyl isobutyl ketone and 150 g of pure water were added to thereaction solution for homogenization, then, the separated aqueous layerwas removed. Further, the organic layer was washed six times with 100 gof a 3% nitric acid aqueous solution and 100 g of pure water. Then theorganic layer was evaporated under reduced pressure to dryness. After ahomogeneous solution was formed by adding 60 g of THF to the residue, acrystal was precipitated with 250 g of methanol. The precipitatedcrystal was separated by filtration, washed twice with 200 g ofmethanol, and collected. The collected crystal was vacuum dried at 70°C. Thus, (A21) was obtained. When the weight average molecular weight(Mw) and dispersity (Mw/Mn) were measured by GPC, the following resultswere obtained.

(A21): Mw=940, Mw/Mn=1.02

Compounds (A22) to (A25) used in an organic film material weresynthesized using the compounds (E1) to (E4) shown below and theabove-described (D2) and (C11).

[Synthesis Example 22] Synthesis of Compound (A22)

A homogeneous dispersion was formed from 10.00 g of the compound (E1),4.76 g of potassium carbonate, and 50 g of N-methyl-2-pyrrolidone undera nitrogen atmosphere at an inner temperature of 50° C. 3.72 g ofpropargyl bromide was slowly added dropwise, and the reaction wasallowed to proceed at an inner temperature of 50° C. for 16 hours. Aftercooling to room temperature, a homogeneous solution was formed by adding100 g of methyl isobutyl ketone and 50 g of pure water, then, theaqueous layer was removed. Further, the organic layer was washed twicewith 30 g of a 3.0% nitric acid aqueous solution and five times with 30g of pure water. The organic layer was evaporated under reduced pressureto dryness. To the residue, 30 g of THF was added, and a crystal wasprecipitated with 100 g of methanol. The precipitated crystal wasseparated by filtration, washed twice with 60 g of methanol, andcollected. The collected crystal was vacuum dried at 70° C. Thus, (A22)was obtained. When the weight average molecular weight (Mw) anddispersity (Mw/Mn) were measured by GPC, the following results wereobtained.

(A22): Mw=960, Mw/Mn=1.07

[Synthesis Example 23] Synthesis of Compound (A23)

A homogeneous solution was formed by adding 100 g ofN-methyl-2-pyrrolidone to 32.13 g of the compound (C11) under a nitrogenatmosphere at an inner temperature of 40° C. Then, 9.31 g of (E2)dissolved in 30 g of N-methyl-2-pyrrolidone beforehand was slowly addeddropwise, and the reaction was allowed to proceed at an innertemperature of 40° C. for 3 hours to obtain an amic acid solution. 130 gof o-xylene was added to the obtained amic acid solution, and whileremoving the generated water from the system under an inner temperatureof 180° C., the reaction was allowed to proceed for 9 hours forimidization. After completion of the reaction, the solution was cooledto room temperature and a crystal was precipitated in 600 g of methanol.The precipitated crystal was separated by filtration, washed twice with300 g of methanol, and collected. The collected crystal was vacuum driedat 70° C. Thus, (A23) was obtained. When the weight average molecularweight (Mw) and dispersity (Mw/Mn) were measured by GPC, the followingresults were obtained.

(A23): Mw=780, Mw/Mn=1.01

[Synthesis Example 24] Synthesis of Compound (A24)

100 g of acetone was added to 15.98 g of the compound (E3) and 5.88 g ofthe compound (E4), and reaction was allowed to proceed under a nitrogenatmosphere at an inner temperature of 40° C. for 3 hours. 2.46 g ofsodium acetate and 15.33 g of acetic anhydride was slowly added dropwiseto the obtained reaction solution, then, the reaction was allowed toproceed at an inner temperature of 50° C. for 4 hours. After completionof the reaction, the solution was cooled to room temperature, 300 g ofmethyl isobutyl ketone was added, and the organic layer washed with 100g of a 3% nitric acid aqueous solution. Then, the organic layer wasfurther washed six times with 100 g of pure water and was evaporatedunder reduced pressure to dryness. To the residue, 100 g of the THF wasadded, and a homogeneous solution was formed. Thereafter a crystal wasprecipitated with 300 g of diisopropyl ether. The precipitated crystalwas separated by filtration, washed twice with 200 g of diisopropylether, and collected. The collected crystal was vacuum dried at 70° C.Thus, (A24) was obtained.

When the weight average molecular weight (Mw) and dispersity (Mw/Mn)were measured by GPC, the following results were obtained.

(A24): Mw=680, Mw/Mn=1.03

[Synthesis Example 25] Synthesis of Compound (A25)

Under a nitrogen atmosphere, after dissolving 7.59 g of an aminecompound (D2) in 100 g of NMP, 20.00 g of tetracarboxylic anhydride(C11) was added, and the reaction was allowed to proceed at an innertemperature of 40° C. for 2 hours. Further, 2.09 g of the compound (E2)was added and the reaction was allowed to proceed for a further 2 hours.130 g of o-xylene was added to the obtained amic acid solution, andwhile removing the generated water from the system under an innertemperature of 180° C., the reaction was allowed to proceed for 9 hoursfor imidization. After completion of the reaction, the solution wascooled to room temperature and a crystal was precipitated in 600 g ofmethanol. The precipitated crystal was separated by filtration, washedtwice with 300 g of methanol, and collected. The collected crystal wasvacuum dried at 70° C. Thus, (A25) was obtained.

When the weight average molecular weight (Mw) and dispersity (Mw/Mn)were measured by GPC, the following results were obtained.

(A25): Mw=4400, Mw/Mn=1.29

The structural formula, weight average molecular weight (Mw), anddispersity (Mw/Mn) of the compounds obtained above are listed in Tables2-1 to 2-4. Additionally Mw and Mw/Mn of the compound (E1) used inComparative Examples are also shown in Table 2-4.

TABLE 2-1 Synthesis Example Compound Mw Mw/Mn 1 (A1)

540 1.01 2 (A2)

520 1.02 3 (A3)

720 1.01 4 (A4)

700 1.02 5 (A5)

690 1.03 6 (A6)

600 1.03 7 (A7)

560 1.04 8 (A8)

950 1.01

TABLE 2-2 Synthesis Example Compound Mw Mw/Mn  9 (A9)

860 1.00 10 (A10)

850 1.03 11 (A11)

900 1.01 12 (A12)

840 1.01 13 (A13)

820 1.01 14 (A14)

870 1.06 50:50 15 (A15)

940 1.03 16 (A16)

990 1.04

TABLE 2-3 Synthesis Example Compound Mw Mw/Mn 17 (A17)

1010 1.04 18 (A18)

1110 1.04 19 (A19)

960 1.06 40:60 20 (A20)

1010 1.04 21 (A21)

940 1.02

TABLE 2-4 Synthesis Example Compound Mw Mw/Mn 22 (A22)

960 1.07 23 (A23)

780 1.01 24 (A24)

680 1.03 25 (A25)

4400 1.29 (E1)

860 1.03Preparation of Compositions (UDL-1 to -26, Comparative Examples UDL-1 to-5) for Forming Organic Film

The compounds (A1) to (A25) and (E1), and (S1) 1,6-diacetoxyhexanehaving a boiling point of 260° C., (S2) γ-butyrolactone having a boilingpoint of 204° C., and (S3) tripropylene glycol monomethyl ether having aboiling point of 242° C. as ahigh-boiling-point solvent were dissolvedin asolvent containing propylene glycol monomethyl ether acetate (PGMEA)or cyclohexanone (CyHO), and 0.1 mass % FC-4430 (manufactured bySumitomo 3M Ltd.) in proportions shown in Table 3. The solution wasfiltered through a 0.1-μm filter made of a fluorinated resin to preparecompositions (UDL-1 to -26, Comparative Examples UDL-1 to -5) forforming an organic film.

TABLE 3 Composition High-boiling- for forming Compound (1) Compound (2)point solvent CYHO PGMEA organic film (part by mass) (part by mass)(part by mass) (part by mass) (part by mass) UDL-1 A1 (10) — — 90 —UDL-2 A2 (10) — — 90 — UDL-3 A3 (10) — — 90 — UDL-4 A4 (10) — — 90 —UDL-5 A5 (10) — — 90 — UDL-6 A6 (10) — — 90 — UDL-7 A7 (10) — — 90 —UDL-8 A8 (10) — — 90 — UDL-9 A9 (10) — — — 90 UDL-10 A10 (10) — — — 90UDL-11 A11 (10) — — — 90 UDL-12 A12 (10) — — — 90 UDL-13 A13 (10) — — —90 UDL-14 A14 (10) — — — 90 UDL-15 A15 (10) — — 90 — UDL-16 A16 (10) — —— 90 UDL-17 A17 (10) — — 90 — UDL-18 A18 (10) — — — 90 UDL-19 A19 (10) —— — 90 UDL-20 A20 (10) — — — 90 UDL-21 A21 (10) — — — 90 UDL-22 A12 (5)A21 (5) — — 90 UDL-23 A9 (10) — S1 (10) — 80 UDL-24 A12 (10) — S2 (10) —80 UDL-25 A13 (10) — S3 (10) — 80 UDL-26 A21 (5) — S2 (5) S3 (5) — 80Comparative A22 (10) — — — 90 Example UDL-1 Comparative A23 (10) — — —90 Example UDL-2 Comparative A24 (10) — — — 90 Example UDL-3 ComparativeA25 (10) — — 90 — Example UDL-4 Comparative E1 (10) — — — 90 ExampleUDL-5

Example 1: Solvent Resistance Measurement (Examples 1-1 to 1-26,Comparative Examples 1-1 to 1-5)

The compositions (UDL-1 to -26, comparative UDL-1 to -5) for forming anorganic film prepared above were applied onto a silicon substrate andbaked at 450° C. for 60 seconds under such a nitrogen stream that theoxygen concentration was controlled to 0.2% or less. Then, the filmthickness was measured. A PGMEA solvent was dispensed on the film andallowed to stand for 30 seconds. The resultant was spin dried and bakedat 100° C. for 60 seconds to evaporate the PGMEA. The film thickness wasmeasured to find a difference in the film thicknesses before and afterthe PGMEA treatment.

TABLE 4 Film thickness Film thickness Composition after film after PGMEA b/a × for forming formation: a treatment: b 100 organic film (Å) (Å)(%) Example 1-1 UDL-1 2021 2018 99.9 Example 1-2 UDL-2 2019 2017 99.9Example 1-3 UDL-3 2002 2000 99.9 Example 1-4 UDL-4 1987 1986 99.9Example 1-5 UDL-5 1998 1993 99.7 Example 1-6 UDL-6 2020 2017 99.9Example 1-7 UDL-7 2004 2002 99.9 Example 1-8 UDL-8 1991 1987 99.8Example 1-9 UDL-9 1994 1990 99.8 Example 1-10 UDL-10 1990 1989 99.9Example 1-11 UDL-11 2001 2001 100.0 Example 1-12 UDL-12 2005 2004 100.0Example 1-13 UDL-13 2022 2020 99.9 Example 1-14 UDL-14 2010 2008 99.9Example 1-15 UDL-15 1977 1976 99.9 Example 1-16 UDL-16 2000 1997 99.9Example 1-17 UDL-17 1999 1996 99.8 Example 1-18 UDL-18 1989 1987 99.9Example 1-19 UDL-19 2003 2001 99.9 Example 1-20 UDL-20 2017 2015 99.9Example 1-21 UDL-21 2009 2006 99.9 Example 1-22 UDL-22 2010 2008 99.9Example 1-23 UDL-23 1998 1997 99.9 Example 1-24 UDL-24 1997 1994 99.8Example 1-25 UDL-25 1995 1994 99.9 Example 1-26 UDL-26 2014 2010 99.8Comparative comparative 2000 1981 99.1 Example 1-1 UDL-1 Comparativecomparative 2001 441 22.0 Example 1-2 UDL-2 Comparative comparative 19981983 99.2 Example 1-3 UDL-3 Comparative comparative 2003 1410 70.4Example 14 UDL-4 Comparative comparative 1998 610 30.5 Example 1-5 UDL-5

As shown in Table 4, in the compositions for forming an organic film ofthe present invention (Examples 1-1 to 1-26), the film remainingpercentages after the PGMEA treatment were 99% or more. This indicatesthat the crosslinking reaction took place even under the nitrogenatmosphere, and sufficient solvent resistance was exhibited. Incontrast, in Comparative Examples 1-2 in which an imide compound with nolinking groups was used, the film remaining percentages after the PGMEAtreatment were less than 50%, and sufficient solvent resistance was notexhibited. Similarly, in the polyimide-type Comparative Examples 1-4,sufficient solvent resistance was not achieved. These results indicatethat R₁, introduced as a substituent is functioning effectively as athermal linking group.

Example 2: Heat Resistance Evaluation (Examples 2-1 to 2-26, ComparativeExamples 2-1 to 2-5)

The compositions (UDL-1 to -26, comparative UDL-1 to -5) for forming anorganic film were each applied onto a silicon substrate and baked in theatmosphere at 180° C. to form a coating film of 200 nm. The filmthickness was measured. This substrate was further baked at 450° C.under such a nitrogen stream that the oxygen concentration wascontrolled to 0.2% or less. Then, the film thickness was measured. Table5 shows these results.

TABLE 5 Film Film Film Composition thickness thickness remaining forforming at 180° C.: at 450° C.: rate % organic film A (A) B (A) (B/A)Example 2-1 UDL-1 2020 2010 99.5 Example 2-2 UDL-2 2010 1996 99.3Example 2-3 UDL-3 1999 1990 99.5 Example 2-4 UDL-4 1983 1969 99.3Example 2-5 UDL-5 1993 1987 99.7 Example 2-6 UDL-6 2008 2001 99.6Example 2-7 UDL-7 1998 1992 99.7 Example 2-8 UDL-8 2008 1988 99.0Example 2-9 UDL-9 2004 2000 99.8 Example 2-10 UDL-10 2005 2002 99.9Example 2-11 UDL-11 2001 1993 99.6 Example 2-12 UDL-12 2012 2011 99.9Example 2-13 UDL-13 2019 2017 99.9 Example 2-14 UDL-14 2006 1992 99.3Example 2-15 UDL-15 1998 1968 98.5 Example 2-16 UDL-16 1987 1949 98.1Example 2-17 UDL-17 1996 1987 99.6 Example 2-18 UDL-18 2003 1991 99.4Example 2-19 UDL-19 2021 2005 99.2 Example 2-20 UDL-20 2000 1980 99.0Example 2-21 UDL-21 2004 2001 99.9 Example 2-22 UDL-22 2013 2009 99.8Example 2-23 UDL-23 1987 1984 99.9 Example 2-24 UDL-24 1989 1987 99.9Example 2-25 UDL-25 1993 1991 99.9 Example 2-26 UDL-26 2003 2001 99.9Comparative comparative 1984 1738 87.6 Example 2-1 UDL-1 Comparativecomparative 2001 964 48.2 Example 2-2 UDL-2 Comparative comparative 19981405 70.3 Example 2-3 UDL-3 Comparative comparative 2001 1608 80.4Example 2-4 UDL-4 Comparative comparative 1979 1373 69.4 Example 2-5UDL-5

As shown in Table 5, in the compositions for forming an organic film ofthe present invention (Examples 2-1 to 2-26), the film thicknesses weredecreased by less than 2% even after the baking at 450° C. Thecompositions for forming an organic film of the present invention keptthe film thicknesses from before the high-temperature baking even afterthe baking at 450° C. This indicates that the compositions for formingan organic film of the present invention have high heat resistance. InExamples 2-15 and 2-16, imide precursor compounds are used, andconsequently, the film thickness decrease was slightly larger comparedto compositions for forming an organic film using compounds imidizedbeforehand by the effect of an elimination reaction due to imidization.However, since the heat resistance after completion of the imidizationis high, the film thickness decrease is suppressed to less than 2%.Compositions for forming an organic film using compounds imidizedbeforehand maintained a film thickness of 99% or more, indicating moreexcellent heat resistance. In contrast, compared to Comparative Example2-2, which uses an imide compound with no linking groups, ComparativeExample 2-3, which uses a maleimide compound, and Comparative Example2-4, which uses a polyimide compound, the inventive material for formingan organic film has fine films formed by thermal linking using aterminal linking group, indicating that a film having excellent heatresistance has been formed.

Examples 3: Filling Property Evaluation (Examples 3-1 to 3-26,Comparative Examples 3-1 to 3-5)

As shown in FIG. 3 , the compositions (UDL-1 to -26, comparative UDL-1to -5) for forming an organic film were each applied onto a SiO₂ wafersubstrate having a dense hole pattern (hole diameter: 0.16 μm, holedepth: 0.50 μm, distance between the centers of adjacent two holes: 0.32μm) and baked with a hot plate at 450° C. for 60 seconds under such anitrogen stream that the oxygen concentration was controlled to 0.2% orless. Thereby, an organic film 8 was formed. The substrate used was abase substrate 7 (SiO₂ wafer substrate) having a dense hole pattern asshown in FIG. 3(G) (top view) and (H) (sectional view). The sectionalshapes of the resulting wafer substrates were observed with a scanningelectron microscope (SEM) to check whether or not the holes were filledwith the organic film without voids (space). Table 6 shows the result.If an organic film material having poor filling property is used, voidsoccur inside the holes in this evaluation. If an organic film materialhaving good filling property is used, the holes are filled with theorganic film without voids in this evaluation as shown in FIG. 3(I).

TABLE 6 Composition for forming Presence/absence organic film of voidsExample 3-1 UDL-1 absent Example 3-2 UDL-2 absent Example 3-3 UDL-3absent Example 3-4 UDL-4 absent Example 3-5 UDL-5 absent Example 3-6UDL-6 absent Example 3-7 UDL-7 absent Example 3-8 UDL-8 absent Example3-9 UDL-9 absent Example 3-10 UDL-10 absent Example 3-11 UDL-11 absentExample 3-12 UDL-12 absent Example 3-13 UDL-13 absent Example 3-14UDL-14 absent Example 3-15 UDL-15 absent Example 3-16 UDL-16 absentExample 3-17 UDL-17 absent Example 3-18 UDL-18 absent Example 3-19UDL-19 absent Example 3-20 UDL-20 absent Example 3-21 UDL-21 absentExample 3-22 UDL-22 absent Example 3-23 UDL-23 absent Example 3-24UDL-24 absent Example 3-25 UDL-25 absent Example 3-26 UDL-26 absentComparative Comparative present Example 3-1 Example UDL-1 ComparativeComparative present Example 3-2 Example UDL-2 Comparative Comparativepresent Example 3-3 Example UDL-3 Comparative Comparative presentExample 3-4 Example UDL-4 Comparative Comparative present Example 3-5Example UDL-5

As shown in Table 6, the compositions for forming an organic film of thepresent invention (Examples 3-1 to 3-26) enabled the hole patterns to befilled without voids, confirming that the filling property wasfavorable. Meanwhile, in Comparative Examples 3-1 to 3-5, voidsoccurred, confirming that the filling property was poor. This resultindicates that the composition for forming an organic film of thepresent invention has heat resistance ensured by thermosetting reactionand the filling property is improved. Meanwhile, in Comparative Examples3-1 to 3-5, heat resistance was insufficient under a nitrogenatmosphere, and therefore, voids occurred, and favorable fillingproperty was not obtained.

Example 4: Planarizing Property Evaluation (Examples 4-1 to 4-26,Comparative Examples 4-1 to 4-3)

The compositions (UDL-1-26, comparative UDL-1, -3, and -4) for formingan organic film prepared above were each applied onto a base substrate 9(SiO₂ wafer substrate) having a giant isolated trench pattern (FIG.4(J), trench width: 10 μm, trench depth: 0.10 μm), and baked at 450° C.for 60 seconds under such a nitrogen stream that the oxygenconcentration was controlled to 0.2% or less. Then, a step (delta 10 inFIG. 4(K)) between the trench portion and the non-trench portion of anorganic film 10 was observed with an atomic force microscope (AFM) NX10manufactured by Park systems Corp. Table 7 shows the result. In thisevaluation, the smaller the step, the better the planarizing property.Note that, in this evaluation, a trench pattern having a depth of 0.10μm was generally planarized using an organic film material having a filmthickness of approximately 0.2 μm. This is a severe evaluation conditionto evaluate the planarizing property. Note that in Comparative ExamplesUDL-2 and UDL-5, it was not possible to evaluate the planarizingproperty, since the film thickness decrease after baking was large.

TABLE 7 Composition for forming Step organic film (nm) Example 4-1 UDL-145 Example 4-2 UDL-2 40 Example 4-3 UDL-3 50 Example 4-4 UDL-4 40Example 4-5 UDL-5 55 Example 4-6 UDL-6 50 Example 4-7 UDL-7 55 Example4-8 UDL-8 35 Example 4-9 UDL-9 25 Example 4-10 UDL-10 25 Example 4-11UDL-11 20 Example 4-12 UDL-12 20 Example 4-13 UDL-13 15 Example 4-14UDL-14 15 Example 4-15 UDL-15 25 Example 4-16 UDL-16 15 Example 4-17UDL-17 35 Example 4-18 UDL-18 45 Example 4-19 UDL-19 30 Example 4-20UDL-20 50 Example 4-21 UDL-21 25 Example 4-22 UDL-22 20 Example 4-23UDL-23 15 Example 4-24 UDL-24 10 Example 4-25 UDL-25 10 Example 4-26UDL-26 15 Comparative comparative 90 Example 4-1 UDL-1 Comparativecomparative 80 Example 4-2 UDL-3 Comparative comparative 95 Example 4-3UDL-4

As shown in Table 7, in the composition for forming an organic film ofthe present invention (Examples 4-1 to 4-26), the organic films hadsmaller steps between the trench portion and the non-trench portion thanthose in Comparative Examples 4-1 to 4-3, confirming that theplanarizing property is excellent. In Comparative Example 4-2, film lossthat occurs due to high-temperature baking is large due to poor heatresistance. Hence, the difference in the film thicknesses of the upperpart of the step and the lower part of the step was emphasized.Accordingly, the planarizing property was degraded so that the resultwas as described above. In Comparative Example 4-3, since polyimide wasused, in addition to the film loss, thermal flowability was lost due toincrease in Mw, which resulted in poor planarizing property. ComparingExamples 4-23 to 4-26 in which the high-boiling-point solvent was addedwith Examples 4-9, 4-12, 4-13, and 4-21 in which the high-boiling-pointsolvent was not added respectively, it is revealed that adding thehigh-boiling-point solvent further improves planarizing property.

Example 5: Patterning Test (Examples 5-1 to 5-26, Comparative Examples5-1 to 5-3)

The compositions (UDL-1 to -26, comparative UDL-1, -3, and 4) forforming an organic film were each applied onto a silicon wafer substrateon which a SiO₂ film of 300 nm had been formed. Then, the resultingsubstrate was baked at 450° C. for 60 seconds under such a nitrogenstream that the oxygen concentration was controlled to 0.2% or less.Thereby, an organic film (resist underlayer film) was formed. A CVD-SiONhard mask was formed thereon, and further an organic antireflective filmmaterial (ARC-29A: manufactured by Nissan Chemical Industries, Ltd.) wasapplied and baked at 210° C. for 60 seconds to form an organicantireflective film having a film thickness of 80 nm. A monolayer resistfor ArF was applied thereon as a resist upper layer film material andbaked at 105° C. for 60 seconds to form a photoresist film having a filmthickness of 100 nm. A liquid immersion top coat material (TC-1) wasapplied on the photoresist film and baked at 90° C. for 60 seconds toform a top coat having a film thickness of 50 nm. Note that inComparative Example UDL-2 and Comparative Example UDL-5, it was notpossible to ensure solvent resistance, and therefore, it was notpossible to proceed to the subsequent patterning test.

The resist upper layer film material (monolayer resist for ArF) wasprepared by: dissolving a polymer (RP1), an acid generator (PAG1), and abasic compound (Aminel) into a solvent containing 0.1 mass % FC-430(manufactured by Sumitomo 3M Ltd.) in proportions shown in Table 8; andfiltering the solution through a 0.1-μm filter made of a fluorinatedresin.

TABLE 8 Acid Basic Polymer generator compound Solvent (part by (part by(part by (part by mass) mass) mass) mass) Monolayer RP1 PAG1 Amine1PGMEA resist (100) (6.6) (0.8) (2500) for ArF

The polymer (RP1), acid generator (PAG1), and basic compound (Aminel)used are shown below.

The liquid immersion top coat material (TC-1) was prepared by:dissolving a top coat polymer (PP1) into organic solvents in proportionsshown in Table 9; and filtering the solution through a 0.1-μm filtermade of a fluorinated resin.

TABLE 9 Polymer Organic solvent (part by mass) (part by mass) TC-1 PP1diisoamyl ether (2700) (100) 2-methyl-1-butanol (270)

The polymer (PP1) used is shown below.

Next, the resulting substrate was exposed to light with an ArF liquidimmersion exposure apparatus (NSR-S610C manufactured by NikonCorporation, NA: 1.30, a: 0.98/0.65, 35 s-polarized dipole illumination,6% halftone phase shift mask), baked at 100° C. for 60 seconds (PEB),and developed with a 2.38 mass % tetramethylammonium hydroxide (TMAH)aqueous solution for 30 seconds. Thus, a 55 nm 1:1 positive line andspace pattern was obtained.

Next, the organic antireflective film and the CVD-SiON hard mask wereprocessed by dry etching using the resist pattern as a mask with anetching apparatus Telius manufactured by Tokyo Electron Limited to forma hard mask pattern. The organic film was etched using the obtained hardmask pattern as a mask to form an organic film pattern. The SiO₂ filmwas processed by etching using the obtained organic film pattern as amask. The etching conditions were as described below.

Conditions for transferring the resist pattern to the SiON hard mask.

Chamber pressure: 10.0 Pa

RF power: 1,500 W

CF₄ gas flow rate: 75 sccm

O₂ gas flow rate: 15 sccm

Time: 15 sec

Conditions for transferring the hard mask pattern to the organic film.

Chamber pressure: 2.0 Pa

RF power: 500 W

Ar gas flow rate: 75 sccm

O₂ gas flow rate: 45 sccm

Time: 120 sec

Conditions for transferring the organic film pattern to the SiO₂ film.

Chamber pressure: 2.0 Pa

RF power: 2,200 W

C₅F₁₂ gas flow rate: 20 sccm

C₂F₆ gas flow rate: 10 sccm

Ar gas flow rate: 300 sccm

O₂ gas flow rate: 60 sccm

Time: 90 sec

The pattern cross sections were observed with an electron microscope(S-4700) manufactured by Hitachi, Ltd. Table 10 shows the result.

TABLE 10 Composition for forming Pattern profile after etching organicfilm for transferring to substrate Example 5-1 UDL-1 vertical profileExample 5-2 UDL-2 vertical profile Example 5-3 UDL-3 vertical profileExample 5-4 UDL-4 vertical profile Example 5-5 UDL-5 vertical profileExample 5-6 UDL-6 vertical profile Example 5-7 UDL-7 vertical profileExample 5-8 UDL-8 vertical profile Example 5-9 UDL-9 vertical profileExample 5-10 UDL-10 vertical profile Example 5-11 UDL-11 verticalprofile Example 5-12 UDL-12 vertical profile Example 5-13 UDL-13vertical profile Example 5-14 UDL-14 vertical profile Example 5-15UDL-15 vertical profile Example 5-16 UDL-16 vertical profile Example5-17 UDL-17 vertical profile Example 5-18 UDL-18 vertical profileExample 5-19 UDL-19 vertical profile Example 5-20 UDL-20 verticalprofile Example 5-21 UDL-21 vertical profile Example 5-22 UDL-22vertical profile Example 5-23 UDL-23 vertical profile Example 5-24UDL-24 vertical profile Example 5-25 UDL-25 vertical profile Example5-26 UDL-26 vertical profile Comparative comparative vertical profileExample 5-1 UDL-1 Comparative comparative vertical profile Example 5-2UDL-3 Comparative comparative vertical profile Example 5-3 UDL-4

As shown in Table 10, as a result of any of the compositions for formingan organic film of the present invention (Examples 5-1 to 5-26), theresist upper layer film pattern was favorably transferred to the finalsubstrate, confirming that the compositions for forming an organic filmof the present invention are suitably used in fine processing accordingto the multilayer resist method. In Comparative Examples 5-1 and 5-2 theheat resistance was insufficient, but the patterns were formed. Further,in Comparative Example 5-3, solvent resistance was also insufficient,but the patterns were formed.

Examples 6: Patterning Test (Examples 6-1 to 6-26, Comparative Examples6-1 to 6-3)

Coating films were formed by the same methods as those in Example 5,except that the compositions (UDL-1 to -26, comparative UDL-1, -3, and-4) for forming an organic film prepared above were each applied onto aSiO₂ wafer substrate having a trench pattern (trench width: 10 μm,trench depth: 0.10 μm) and baked at 450° C. for 60 seconds under such anitrogen stream that the oxygen concentration was controlled to 0.2% orless. Then, the coating films were subjected to patterning and dryetching, and the resulting pattern profiles were observed.

TABLE 11 Composition for forming Pattern profile after etching organicfilm for transferring to substrate Example 6-1 UDL-1 vertical profileExample 6-2 UDL-2 vertical profile Example 6-3 UDL-3 vertical profileExample 6-4 UDL-4 vertical profile Example 6-5 UDL-5 vertical profileExample 6-6 UDL-6 vertical profile Example 6-7 UDL-7 vertical profileExample 6-8 UDL-8 vertical profile Example 6-9 UDL-9 vertical profileExample 6-10 UDL-10 vertical profile Example 6-11 UDL-11 verticalprofile Example 6-12 UDL-12 vertical profile Example 6-13 UDL-13vertical profile Example 6-14 UDL-14 vertical profile Example 6-15UDL-15 vertical profile Example 6-16 UDL-16 vertical profile Example6-17 UDL-17 vertical profile Example 6-18 UDL-18 vertical profileExample 6-19 UDL-19 vertical profile Example 6-20 UDL-20 verticalprofile Example 6-21 UDL-21 vertical profile Example 6-22 UDL-22vertical profile Example 6-23 UDL-23 vertical profile Example 6-24UDL-24 vertical profile Example 6-25 UDL-25 vertical profile Example6-26 UDL-26 vertical profile Comparative comparative pattern collapseExample 6-1 UDL-1 Comparative comparative pattern collapse Example 6-2UDL-3 Comparative comparative pattern collapse Example 6-3 UDL-4

As shown in Table 11, as a result of any of the compositions for formingan organic film of the present invention (Examples 6-1 to 6-26), theresist upper layer film pattern was favorably transferred to the finalsubstrate, confirming that the compositions for forming an organic filmof the present invention are suitably used in fine processing accordingto the multilayer resist method. Meanwhile, in Comparative Examples 6-1to 6-3, even when solvent resistance was achieved and a cured film wasformed, the pattern was poorly filled. Hence, pattern collapse occurredat patterning, and favorable patterns were not obtained in the end.

From the above, it was revealed that the inventive materials for formingan organic film containing the inventive compound for forming an organicfilm have heat resistance to 400° C. or higher and high filling andplanarizing properties even in an oxygen-free inert gas. Thus, theinventive materials for forming an organic film are quite useful asorganic film materials used in multilayer resist methods. Moreover, theinventive patterning processes using these materials can precisely forma fine pattern even when a body to be processed is a stepped substrate.

It should be noted that the present invention is not restricted to theabove-described embodiments. The embodiments are merely examples so thatany embodiments that have substantially the same feature and demonstratethe same functions and effects as those in the technical concept asdisclosed in claims of the present invention are included in thetechnical range of the present invention.

The invention claimed is:
 1. A material for forming an organic film, comprising: (A) a compound for forming an organic film shown by the following general formula (1D) or (1E); and (B) an organic solvent,

wherein W₂ represents a group shown by the following general formula (1G-2) or a group shown by the following general formula (1G-3), and R₁ represents any of the groups shown by the following formula (1C), and two or more kinds of R₁ may be used in combination,

wherein W₂ and R₁ have the same meanings as defined above; and R₂ represents a hydrogen atom or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms, and a methylene group configuring R₂ may be substituted with an oxygen atom or a carbonyl group,

wherein W₃ represents any of groups shown by the following formula (1H-2),

wherein an aromatic ring in the formula (1H-2) may have a substituent thereon,

wherein W₅ represents a group shown by the following formula (1H-3),

wherein an aromatic ring in the formula (1H-3) may have a substituent thereon.
 2. The material for forming an organic film according to claim 1, wherein the component (A) satisfies 1.00≤Mw/Mn≤1.10 where Mw is a weight average molecular weight and Mn is a number average molecular weight measured by gel permeation chromatography in terms of polystyrene.
 3. The material for forming an organic film according to claim 1, wherein the component (B) is a mixture of one or more kinds of organic solvent having a boiling point of lower than 180° C. and one or more kinds of organic solvent having a boiling point of 180° C. or higher.
 4. The material for forming an organic film according to claim 1, further comprising at least one of (C) an acid generator, (D) a surfactant, (E) a crosslinking agent, and (F) a plasticizer.
 5. A substrate for manufacturing a semiconductor device, comprising an organic film on the substrate, the organic film being formed by curing the material for forming an organic film according to claim
 1. 6. A method for forming an organic film employed in a semiconductor device manufacturing process, the method comprising: spin-coating a substrate to be processed with the material for forming an organic film according to claim 1; and heating the substrate to be processed coated with the material for forming an organic film under an inert gas atmosphere at a temperature of 50° C. or higher to 600° C. or lower within a range of 10 seconds to 7200 seconds to obtain a cured film.
 7. The method for forming an organic film according to claim 6, wherein the inert gas has an oxygen concentration of 1% or less.
 8. The method for forming an organic film according to claim 6, wherein the substrate to be processed has a structure or a step with a height of 30 nm or more.
 9. A method for forming an organic film employed in a semiconductor device manufacturing process, the method comprising: spin-coating a substrate to be processed with the material for forming an organic film according to claim 1; heating the substrate to be processed coated with the material for forming an organic film in air at a temperature of 50° C. or higher to 250° C. or lower within a range of 5 seconds to 600 seconds to form a coating film; and then heating under an inert gas atmosphere at a temperature of 200° C. or higher to 600° C. or lower within a range of 10 seconds to 7200 seconds to obtain a cured film.
 10. A patterning process comprising: forming an organic film on a body to be processed from the material for forming an organic film according to claim 1; forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film material; forming a resist upper layer film on the silicon-containing resist middle layer film from a photoresist composition; forming a circuit pattern in the resist upper layer film; transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; and further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.
 11. The patterning process according to claim 10, wherein the circuit pattern is formed by a lithography using light with a wavelength of 10 nm or more to 300 nm or less, a direct drawing by electron beam, a nanoimprinting, or a combination thereof.
 12. The patterning process according to claim 10, wherein when the circuit pattern is formed, the circuit pattern is developed by alkaline development or development with an organic solvent.
 13. The patterning process according to claim 10, wherein the body to be processed is a semiconductor device substrate or the semiconductor device substrate coated with any of a metal film, a metal carbide film, a metal oxide film, a metal nitride film, a metal oxycarbide film, and a metal oxynitride film.
 14. The patterning process according to claim 13, wherein as the body to be processed, a body to be processed comprising silicon, titanium, tungsten, hafnium, zirconium, chromium, germanium, copper, silver, gold, aluminum, indium, gallium, arsenic, palladium, iron, tantalum, iridium, cobalt, manganese, molybdenum, or an alloy thereof is used.
 15. A patterning process comprising: forming an organic film on a body to be processed from the material for forming an organic film according to claim 1; forming a silicon-containing resist middle layer film on the organic film from a silicon-containing resist middle layer film material; forming an organic antireflective film on the silicon-containing resist middle layer film; forming a resist upper layer film on the organic antireflective film from a photoresist composition, so that a 4-layered film structure is constructed; forming a circuit pattern in the resist upper layer film; transferring the pattern to the organic antireflective film and the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching using the silicon-containing resist middle layer film having the transferred pattern as a mask; and further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.
 16. A patterning process comprising: forming an organic film on a body to be processed from the material for forming an organic film according to claim 1; forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a titanium oxide film, and a titanium nitride film on the organic film; forming a resist upper layer film on the inorganic hard mask from a photoresist composition; forming a circuit pattern in the resist upper layer film; transferring the pattern to the inorganic hard mask by etching using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching using the inorganic hard mask having the transferred pattern as a mask; and further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.
 17. The patterning process according to claim 16, wherein the inorganic hard mask is formed by a CVD method or an ALD method.
 18. A patterning process comprising: forming an organic film on a body to be processed from the material for forming an organic film according to claim 1; forming an inorganic hard mask selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a titanium oxide film, and a titanium nitride film on the organic film; forming an organic antireflective film on the inorganic hard mask; forming a resist upper layer film on the organic antireflective film from a photoresist composition, so that a 4-layered film structure is constructed; forming a circuit pattern in the resist upper layer film; transferring the pattern to the organic antireflective film and the inorganic hard mask by etching using the resist upper layer film having the formed pattern as a mask; transferring the pattern to the organic film by etching using the inorganic hard mask having the transferred pattern as a mask; and further transferring the pattern to the body to be processed by etching using the organic film having the transferred pattern as a mask.
 19. The material for forming an organic film according to claim 1, wherein the component (A) is a compound shown by the following general formula (1I),

wherein W₄ represents a group shown by the following formula (1J), n1 represents 0 or 1, and R₁ has the same meaning as defined above


20. A compound for forming an organic film shown by the following general formula (1D) or (1E),

wherein W₂ represents a group shown by the following general formula (1G-2) or a group shown by the following general formula (1G-3), and R₁ represents any of the groups shown by the following formula (1C), and two or more kinds of R₁ may be used in combination,

wherein W₂ and R₁ have the same meanings as defined above; and R₂ represents a hydrogen atom or a linear or branched, saturated or unsaturated hydrocarbon group having 1 to 20 carbon atoms, and a methylene group configuring R₂ may be substituted with an oxygen atom or a carbonyl group,

wherein W₃ represents any of groups shown by the following formula (1H-2),

wherein an aromatic ring in the formula (1H-2) may have a substituent thereon,

wherein W₅ represents a group shown by the following formula (1H-3),

wherein an aromatic ring in the formula (1H-3) may have a substituent thereon.
 21. The compound according to claim 20, wherein the compound for forming an organic film is a compound shown by the following general formula (1I),

wherein W₄ represents a group shown by the following formula (1J), n1 represents 0 or 1, and R₁ has the same meaning as defined above 